Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1382-1386
|

CONTENTS

氧化物半导体透明导电薄膜的最佳掺杂含量理论计算

范志新 , 孙以材 and 陈玖琳

+ Author Affiliations

PDF

Key words: 氧化物半导体, 透明导电薄膜, 最佳掺杂含量

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3462 Times PDF downloads: 2238 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1382-1386
      范志新, 孙以材, 陈玖琳. 氧化物半导体透明导电薄膜的最佳掺杂含量理论计算[J]. 半导体学报(英文版), 2001, 22(11): 1382-1386.
      Citation:
      范志新, 孙以材, 陈玖琳. 氧化物半导体透明导电薄膜的最佳掺杂含量理论计算[J]. 半导体学报(英文版), 2001, 22(11): 1382-1386.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return