Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 6-10
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用弹道电子显微术研究 Co-Ti-Si系统的退火温度对 CoSi_2/Si势垒不均匀性的影响(英文)

竺士炀 , 屈新萍 , 茹国平 and 李炳宗

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Key words: 弹道电子显微术, 肖特基势垒高度, 硅化物, 不均匀性

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 6-10
      竺士炀, 屈新萍, 茹国平, 李炳宗. 用弹道电子显微术研究 Co-Ti-Si系统的退火温度对 CoSi_2/Si势垒不均匀性的影响(英文)[J]. 半导体学报(英文版), 2002, 23(1): 6-10.
      Citation:
      竺士炀, 屈新萍, 茹国平, 李炳宗. 用弹道电子显微术研究 Co-Ti-Si系统的退火温度对 CoSi_2/Si势垒不均匀性的影响(英文)[J]. 半导体学报(英文版), 2002, 23(1): 6-10.
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      • Received Date: 2015-08-19

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