Chin. J. Semicond. > 2006, Volume 27 > Issue 7 > 1221-1224
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Effect of Growth Temperature on Properties of ZnO Thin Films

Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, Fang Wenqing and Jiang Fengyi

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Abstract: High quality ZnO thin films are grown on Al2O3 (0001) substrates by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD).Effects of growth temperature on the structure,optical characteristics of ZnO thin films are investigated by double crystal X-ray diffraction (ω and θ-2θ scans) and room temperature photoluminescence(PL) spectra.With the rise of the growth temperature,the c-axis lattice constant of the ZnO films increases while the bandgap becomes wider.

Key words: ZnO, MOCVD, DCXRD, PL, strain

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(7): 1221-1224
      Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, Fang Wenqing, Jiang Fengyi. Effect of Growth Temperature on Properties of ZnO Thin Films[J]. Journal of Semiconductors, 2006, 27(7): 1221-1224. ****Su H B, Dai J N, Pu Y, Wang L, Li F, Fang W Q, Jiang F Y. Effect of Growth Temperature on Properties of ZnO Thin Films[J]. Chin. J. Semicond., 2006, 27(7): 1221.
      Citation:
      Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, Fang Wenqing, Jiang Fengyi. Effect of Growth Temperature on Properties of ZnO Thin Films[J]. Journal of Semiconductors, 2006, 27(7): 1221-1224. ****
      Su H B, Dai J N, Pu Y, Wang L, Li F, Fang W Q, Jiang F Y. Effect of Growth Temperature on Properties of ZnO Thin Films[J]. Chin. J. Semicond., 2006, 27(7): 1221.
      shu

      Effect of Growth Temperature on Properties of ZnO Thin Films

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Engineering Research Center for Luminescence Materials and Devices of the Education Ministry,Nanchang University,Nanchang 330047,China

      • Received Date: 2015-08-20

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