| Citation: |
Shen Huajun, Chen Yanhu, Yan Beiping, 葛霁, Ge Ji, Wang Xiantai, Liu Xinyu. C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with ＞40% Power-Added Efficiency[J]. Journal of Semiconductors, 2006, 27(9): 1612-1615.
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Shen H J, Chen Y H, Yan B P, Ge J, Wang X T, Liu X Y. C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with ＞40% Power-Added Efficiency[J]. Chin. J. Semicond., 2006, 27(9): 1612.
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C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with ＞40% Power-Added Efficiency
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Abstract
A C-band InGaP/GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning,emitter ballasting,and an electric plated air bridge.The measured BVCBO is greater than 31V and the BVCEO is greater than 21V.At a frequency of 5.4GHz,the saturated CW output power of the fabricated HBT power transistor is more than 1.4W with a maximum power density of 3.5W/mm,and the power added efficiency is greater than 40%.-
Keywords:
- InGaP/GaAs,
- power,
- heterojunction bipolar transistor
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References
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Proportional views
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