| Citation: |
Cheng Wei, Hao Yue, Ma Xiaohua, Liu Hongxia. Data Retention in EEPROM Cells[J]. Journal of Semiconductors, 2006, 27(7): 1290-1293.
****
Cheng W, Hao Y, Ma X H, Liu H X. Data Retention in EEPROM Cells[J]. Chin. J. Semicond., 2006, 27(7): 1290.
|
Data Retention in EEPROM Cells
-
Abstract
We present a theoretical and experimental investigation of the date retention ability of EEPROM cells at a given voltage.An expression for EEPROM data retention is derived.The electrical characteristics are presented.The result shows that the data retention time varies linearly with the applied voltage in a log-log plot.Under the assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide,the data retention time of EEPROM cells is derived,and the experience formula is checked by experiment.-
Keywords:
- EEPROM,
- charge retention,
- threshold voltage,
- Fowler-Nordheim
-
References
-
Proportional views
DownLoad: