Chin. J. Semicond. > 2002, Volume 23 > Issue 8 > 800-804
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Si(100)衬底上高质量3C-SiC的改良外延生长(英文)

孙国胜 , 王雷 , 罗木昌 , 赵万顺 , 孙殿照 , 曾一平 , 李晋闽 and 林兰英

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Key words: CVD/LPCVD, 异质外延生长, 3C-SiC

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(8): 800-804
      孙国胜, 王雷, 罗木昌, 赵万顺, 孙殿照, 曾一平, 李晋闽, 林兰英. Si(100)衬底上高质量3C-SiC的改良外延生长(英文)[J]. 半导体学报(英文版), 2002, 23(8): 800-804.
      Citation:
      孙国胜, 王雷, 罗木昌, 赵万顺, 孙殿照, 曾一平, 李晋闽, 林兰英. Si(100)衬底上高质量3C-SiC的改良外延生长(英文)[J]. 半导体学报(英文版), 2002, 23(8): 800-804.
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      • Received Date: 2015-08-19

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