Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 2001-2005

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Key words: 宽带硅基过渡热沉高速电吸收调制器高阻率硅衬底低损耗共面波导薄膜电阻

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      熊兵, 王健, 蔡鹏飞, 田建柏, 孙长征, 罗毅. 用于40Gb/s光电子器件的新型低成本硅基过渡热沉[J]. 半导体学报(英文版), 2005, 26(10): 2001-2005.
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      熊兵, 王健, 蔡鹏飞, 田建柏, 孙长征, 罗毅. 用于40Gb/s光电子器件的新型低成本硅基过渡热沉[J]. 半导体学报(英文版), 2005, 26(10): 2001-2005.

      • Received Date: 2015-08-19

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