Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 2001-2005
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用于40Gb/s光电子器件的新型低成本硅基过渡热沉

熊兵 , 王健 , 蔡鹏飞 , 田建柏 , 孙长征 and 罗毅

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Key words: 宽带硅基过渡热沉, 高速电吸收调制器, 高阻率硅衬底, 低损耗共面波导, 薄膜电阻

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 2001-2005
      熊兵, 王健, 蔡鹏飞, 田建柏, 孙长征, 罗毅. 用于40Gb/s光电子器件的新型低成本硅基过渡热沉[J]. 半导体学报(英文版), 2005, 26(10): 2001-2005.
      Citation:
      熊兵, 王健, 蔡鹏飞, 田建柏, 孙长征, 罗毅. 用于40Gb/s光电子器件的新型低成本硅基过渡热沉[J]. 半导体学报(英文版), 2005, 26(10): 2001-2005.
      shu

      • Received Date: 2015-08-19

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