Chin. J. Semicond. > 1999, Volume 20 > Issue 7 > 573-577
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Siδ-掺杂In_(0.2)Ga_(0.8)As/GaAs应变单量子阱光致发光研究

窦红飞 , 陈效双 , 陆卫 , 李志锋 and 沈学础

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    Received: 20 August 2015 Revised: Online: Published: 01 July 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(7): 573-577
      窦红飞, 陈效双, 陆卫, 李志锋, 沈学础. Siδ-掺杂In_(0.2)Ga_(0.8)As/GaAs应变单量子阱光致发光研究[J]. 半导体学报(英文版), 1999, 20(7): 573-577.
      Citation:
      窦红飞, 陈效双, 陆卫, 李志锋, 沈学础. Siδ-掺杂In_(0.2)Ga_(0.8)As/GaAs应变单量子阱光致发光研究[J]. 半导体学报(英文版), 1999, 20(7): 573-577.
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      • Received Date: 2015-08-20

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