Citation: |
何进, 王新, 陈星弼. 基于SDB技术的新结构PT型IGBT器件研制[J]. 半导体学报(英文版), 2000, 21(9): 877-881.
|
-
References
-
Proportional views
Key words: IGBT, 穿通, 优化设计, 硅片直接键合
Article views: 2393 Times PDF downloads: 1080 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 September 2000
Citation: |
何进, 王新, 陈星弼. 基于SDB技术的新结构PT型IGBT器件研制[J]. 半导体学报(英文版), 2000, 21(9): 877-881.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2