Chin. J. Semicond. > 2000, Volume 21 > Issue 9 > 877-881
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基于SDB技术的新结构PT型IGBT器件研制

何进 , 王新 and 陈星弼

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Key words: IGBT, 穿通, 优化设计, 硅片直接键合

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(9): 877-881
      何进, 王新, 陈星弼. 基于SDB技术的新结构PT型IGBT器件研制[J]. 半导体学报(英文版), 2000, 21(9): 877-881.
      Citation:
      何进, 王新, 陈星弼. 基于SDB技术的新结构PT型IGBT器件研制[J]. 半导体学报(英文版), 2000, 21(9): 877-881.
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      • Received Date: 2015-08-20

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