Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 302-306
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CMOS器件的等时、等温退火效应

何宝平 , 龚建成 , 王桂珍 , 罗尹虹 and 姜景和

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Key words: 等温退火, 等时退火, 剂量率

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 302-306
      何宝平, 龚建成, 王桂珍, 罗尹虹, 姜景和. CMOS器件的等时、等温退火效应[J]. 半导体学报(英文版), 2004, 25(3): 302-306.
      Citation:
      何宝平, 龚建成, 王桂珍, 罗尹虹, 姜景和. CMOS器件的等时、等温退火效应[J]. 半导体学报(英文版), 2004, 25(3): 302-306.
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      • Received Date: 2015-08-19

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