Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1116-1118
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多孔硅上生长Ge量子点的光学特性

王亚东 , 黄靖云 , 叶志镇 and 赵炳辉

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Key words: 量子点, 亚能带吸收, 红外光探测器

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1116-1118
      王亚东, 黄靖云, 叶志镇, 赵炳辉. 多孔硅上生长Ge量子点的光学特性[J]. 半导体学报(英文版), 2001, 22(9): 1116-1118.
      Citation:
      王亚东, 黄靖云, 叶志镇, 赵炳辉. 多孔硅上生长Ge量子点的光学特性[J]. 半导体学报(英文版), 2001, 22(9): 1116-1118.
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      • Received Date: 2015-08-20

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