Chin. J. Semicond. > 1992, Volume 13 > Issue 3 > 162-166
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用静态升华法生长HgI_2大单晶体及其性质的观测

李正辉 , 朱世富 , 陈观雄 and 赵北君

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(3): 162-166
      李正辉, 朱世富, 陈观雄, 赵北君. 用静态升华法生长HgI_2大单晶体及其性质的观测[J]. 半导体学报(英文版), 1992, 13(3): 162-166.
      Citation:
      李正辉, 朱世富, 陈观雄, 赵北君. 用静态升华法生长HgI_2大单晶体及其性质的观测[J]. 半导体学报(英文版), 1992, 13(3): 162-166.
      shu

      • Received Date: 2015-08-19

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