Chin. J. Semicond. > 1989, Volume 10 > Issue 3 > 230-232
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As~+、Si~+双注入GaAs瞬态退火的行为

范伟栋 and 王渭源

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(3): 230-232
      范伟栋, 王渭源. As~+、Si~+双注入GaAs瞬态退火的行为[J]. 半导体学报(英文版), 1989, 10(3): 230-232.
      Citation:
      范伟栋, 王渭源. As~+、Si~+双注入GaAs瞬态退火的行为[J]. 半导体学报(英文版), 1989, 10(3): 230-232.
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      • Received Date: 2015-08-19

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