Chin. J. Semicond. > 1988, Volume 9 > Issue 6 > 640-647
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一种新的硅氧化方法——氟化氢增强氧化

尤伟 , 徐元森 and 郑养鉥

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(6): 640-647
      尤伟, 徐元森, 郑养鉥. 一种新的硅氧化方法——氟化氢增强氧化[J]. 半导体学报(英文版), 1988, 9(6): 640-647.
      Citation:
      尤伟, 徐元森, 郑养鉥. 一种新的硅氧化方法——氟化氢增强氧化[J]. 半导体学报(英文版), 1988, 9(6): 640-647.
      shu

      • Received Date: 2015-08-19

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