Citation: |
Zhu Yangjun, Miao Qinghai, Zhang Xinghua, Yang Lieyong, Lu Shuojin. Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices[J]. Journal of Semiconductors, 2007, 28(6): 980-983.
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Zhu Y J, Miao Q H, Zhang X H, Yang L Y, Lu S J. Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices[J]. Chin. J. Semicond., 2007, 28(6): 980.
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Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices
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Abstract
A new method for the real-time measurement of junction temperature is introduced.For transistors dissipating power at a constant rate,the heating current is treated as the measuring current in order to measure directly the junction temperature of the transistors.The method can be used in on-line measurements.-
Keywords:
- real-time measurement,
- junction temperature,
- background data
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References
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Proportional views