Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1557-1560
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LP-MOVPE生长宽波导有源区无铝单量子阱激光器

李忠辉 , 王向武 , 杨进华 and 张兴德

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Key words: 金属有机化合物气相外延, 宽波导, 分别限制, 单量子阱, 无铝激光器

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1557-1560
      李忠辉, 王向武, 杨进华, 张兴德. LP-MOVPE生长宽波导有源区无铝单量子阱激光器[J]. 半导体学报(英文版), 2001, 22(12): 1557-1560.
      Citation:
      李忠辉, 王向武, 杨进华, 张兴德. LP-MOVPE生长宽波导有源区无铝单量子阱激光器[J]. 半导体学报(英文版), 2001, 22(12): 1557-1560.
      shu

      • Received Date: 2015-08-20

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