Chin. J. Semicond. > 1982, Volume 3 > Issue 6 > 482-492
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高斯掺杂分布GaAs肖特基结的雪崩击穿电压

程兆年 , 袁云芳 and 王渭源

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(6): 482-492
      程兆年, 袁云芳, 王渭源. 高斯掺杂分布GaAs肖特基结的雪崩击穿电压[J]. 半导体学报(英文版), 1982, 3(6): 482-492.
      Citation:
      程兆年, 袁云芳, 王渭源. 高斯掺杂分布GaAs肖特基结的雪崩击穿电压[J]. 半导体学报(英文版), 1982, 3(6): 482-492.
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      • Received Date: 2015-08-20

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