Time Dependence of Radiation Damage in Bipolar Operational Amplifiers

Gao Song; Lu Wu; Ren Diyuan; 牛振红; Niu Zhenhong

Chin. J. Semicond. > 2006, Volume 27 > Issue 7 > 1280-1284

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Time Dependence of Radiation Damage in Bipolar Operational Amplifiers

Gao Song, Lu Wu, Ren Diyuan, 牛振红 and Niu Zhenhong

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Abstract: The time dependence of radiation damage in bipolar op-amps is studied through a series of radiation experiments.The results show that radiation damage in bipolar op-amps is closely related to time,and we can evaluate low-dose rate radiation damage in devices by adjusting radiating the dose rate,annealing temperature,and annealing time parameters to experiment on circulating radiation-anneal.From the interface states point of view,the possible mechanisms of radiation damage are also analyzed.

Key words: bipolar operational amplifiers, radiation damage, time dependence, low dose rate, accelerated evaluation

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Gao Song, Lu Wu, Ren Diyuan, 牛振红, Niu Zhenhong. Time Dependence of Radiation Damage in Bipolar Operational Amplifiers[J]. Journal of Semiconductors, 2006, 27(7): 1280-1284.

Gao S, Lu W, Ren D Y, Niu Z H. Time Dependence of Radiation Damage in Bipolar Operational Amplifiers[J]. Chin. J. Semicond., 2006, 27(7): 1280.

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Received: 20 August 2015 Revised: Online: Published: 01 July 2006

The time dependence of radiation damage in bipolar op-amps is studied through a series of radiation experiments.The results show that radiation damage in bipolar op-amps is closely related to time,and we can evaluate low-dose rate radiation damage in devices by adjusting radiating the dose rate,annealing temperature,and annealing time parameters to experiment on circulating radiation-anneal.From the interface states point of view,the possible mechanisms of radiation damage are also analyzed.

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