Chin. J. Semicond. > 1998, Volume 19 > Issue 1 > 38-42
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单场限环结构击穿电压的表面电荷效应分析

唐本奇 , 高玉民 and 罗晋生

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(1): 38-42
      唐本奇, 高玉民, 罗晋生. 单场限环结构击穿电压的表面电荷效应分析[J]. 半导体学报(英文版), 1998, 19(1): 38-42.
      Citation:
      唐本奇, 高玉民, 罗晋生. 单场限环结构击穿电压的表面电荷效应分析[J]. 半导体学报(英文版), 1998, 19(1): 38-42.
      shu

      • Received Date: 2015-08-20

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