| Citation: |
Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction[J]. Journal of Semiconductors, 2006, 27(S1): 378-380.
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Zhang L, Zhang Y M, Zhang Y M, Tang X Y. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction[J]. Chin. J. Semicond., 2006, 27(13): 378.
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Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction
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Abstract
A novel SiC ohmic contact of n+ polysilicon/n+ SiC heterojunction is simulated with the numerical simulator ISE TCAD.The simulated results show that the n+ polysilicon/n+ SiC heterojunction can form excellent ohmic contact and has the advantages of simple process and excellent performance.-
Keywords:
- SiC,
- ohmic contact,
- poly-silicon,
- heterojunction
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References
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Proportional views
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