| Citation: |
Jia Yunfang, Niu Wencheng, Zhang Fuhai, Liu Guohua, Yu Mei. Simulation of EI-Interface Voltage in an EIS-Type Semiconductor Biochemical Sensor[J]. Journal of Semiconductors, 2005, 26(11): 2196-2201.
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Jia Y F, Niu W C, Zhang F H, Liu G H, Yu M. Simulation of EI-Interface Voltage in an EIS-Type Semiconductor Biochemical Sensor[J]. Chin. J. Semicond., 2005, 26(11): 2196.
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Simulation of EI-Interface Voltage in an EIS-Type Semiconductor Biochemical Sensor
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Abstract
An EI(electrolyte insulator)-interface voltage model suitable for EIS(electrolyte insulator semiconductor) sensor is proposed.Based on this model a CAA program is developed.Using this program,the voltage distribution of the double layer,density of electriferous sites, and EI-interface voltage are quantificationally analyzed.Finally, to certify this model,the contrast of the simulated results with the experiment data of ISFET (ion sensitive field effect transistor) is given. -
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