Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 127-131
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硅基多孔U-SiC薄膜的电致发光及其机理分析

吴晓华 , 鲍希茂 , 李宁生 , 廖良生 and 郑祥钦

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Key words: SiC薄膜, 电致发光, 发光机理

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 127-131
      吴晓华, 鲍希茂, 李宁生, 廖良生, 郑祥钦. 硅基多孔U-SiC薄膜的电致发光及其机理分析[J]. 半导体学报(英文版), 2000, 21(2): 127-131.
      Citation:
      吴晓华, 鲍希茂, 李宁生, 廖良生, 郑祥钦. 硅基多孔U-SiC薄膜的电致发光及其机理分析[J]. 半导体学报(英文版), 2000, 21(2): 127-131.
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      • Received Date: 2015-08-20

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