| Citation: |
Lü Jin, Chen Yubin, Zuo Zheng, Shi Yi, Pu Lin, Zheng Youdou. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. Journal of Semiconductors, 2008, 29(4): 770-773.
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Lü J, Chen Y B, Zuo Z, Shi Y, Pu L, Zheng Y D. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. J. Semicond., 2008, 29(4): 770.
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Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals
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Abstract
Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method.Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage (C-V) and capacitance-time (C-t) measurements.The findings indicate that holes reach a longer retention time in gradual Ge1-xSix/Si hetero-nanocrystals,which can be attributed to the holes trapped solidly on the side of the higher valence band of the compound potential barrier caused by the offset between Ge and Si. -
References
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