Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 257-261
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不同厚度超薄栅氧化物MOSFET的应力诱导漏电流(英文)

张贺秋 , 许铭真 and 谭长华

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Key words: 应力诱导漏电流, 超薄, MOSFET, 陷阱

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 257-261
      张贺秋, 许铭真, 谭长华. 不同厚度超薄栅氧化物MOSFET的应力诱导漏电流(英文)[J]. 半导体学报(英文版), 2004, 25(3): 257-261.
      Citation:
      张贺秋, 许铭真, 谭长华. 不同厚度超薄栅氧化物MOSFET的应力诱导漏电流(英文)[J]. 半导体学报(英文版), 2004, 25(3): 257-261.
      shu

      • Received Date: 2015-08-19

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