| Citation: |
Zha Gangqiang, Tan Tingting, Zhang Wenhua, Jie Wanqi. Barriers of Au/CdZnTe with Synchrotron Radiation[J]. Journal of Semiconductors, 2007, 28(S1): 552-554.
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Zha G Q, Tan T T, Zhang W H, Jie W Q. Barriers of Au/CdZnTe with Synchrotron Radiation[J]. Chin. J. Semicond., 2007, 28(S1): 552.
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Barriers of Au/CdZnTe with Synchrotron Radiation
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Abstract
Au Schottky contact was deposited oil clean CZT(110) and (111)A surfaces by molecular beam epitaxy.Synchro· tron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe.The real Schottky barrier heights were measured to be 0.738 and 0.566eV，respectively.Using metal-induced gap states (MIGS) model，the results of experiment were explained.-
Keywords:
- CdZnTe,
- Schottky barrier,
- SRPES,
- metal-induced gap states
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References
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Proportional views
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