| Citation: |
Zhao Youwen, Dong Zhiyuan, Li Chengji, Duan Manlong, Sun Wenrong. Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP[J]. Journal of Semiconductors, 2006, 27(3): 524-529.
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Zhao Y W, Dong Z Y, Li C J, Duan M L, Sun W R. Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP[J]. Chin. J. Semicond., 2006, 27(3): 524.
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Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP
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Abstract
By combining the measurement results of electrical properties and deep level defects,the electrical properties,thermal stability,and electrical uniformity of semi-insulating single crystal InP are demonstrated that they have a close correlation with the content of the deep level defects.An approach to improving the material quality is given through analysis of the dependence of the deep level defects on annealing and growth conditions.The formation mechanism and nature of the deep level defects are discussed.-
Keywords:
- InP,
- semi-insulating,
- defect
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References
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Proportional views
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