PAPERS
Abstract: Based on research on the amplitude of RTS in SMIC 90nm CMOS nMOS 0.18μm×0.15μm devices with a 1.4nm gate oxide,an approach to diffusion that fits MOS operation principles better is proposed.Furthermore,a new mechanism in which a border trap changes the charge distribution of the gate and thus influences the channel current is also involved.Research shows that this method not only explains the experiment results,but also can be used to explain the distribution of RTS amplitude.
Key words: RTS, amplitude, deep sub-micron, MOS
| 1 |
Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors Qiaozhi Zhu, Dejun Wang Journal of Semiconductors, 2014, 35(2): 024002. doi: 10.1088/1674-4926/35/2/024002 |
| 2 |
Total dose effects on the matching properties of deep submicron MOS transistors Yuxin Wang, Rongbin Hu, Ruzhang Li, Guangbing Chen, Dongbing Fu, et al. Journal of Semiconductors, 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007 |
| 3 |
MOS Capacitance-Voltage Characteristics: V. Methods to Enhance the Trapping Capacitance Jie Binbin, Sah Chihtang Journal of Semiconductors, 2012, 33(2): 021001. doi: 10.1088/1674-4926/33/2/021001 |
| 4 |
R. K. Singh, Neeraj Kr. Shukla, Manisha Pattanaik Journal of Semiconductors, 2012, 33(5): 055001. doi: 10.1088/1674-4926/33/5/055001 |
| 5 |
Moumita Mukherjee, Pravash R. Tripathy, S. P. Pati Journal of Semiconductors, 2011, 32(11): 113001. doi: 10.1088/1674-4926/32/11/113001 |
| 6 |
MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121002. doi: 10.1088/1674-4926/32/12/121002 |
| 7 |
Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001 |
| 8 |
A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors Juang Miin-Horng, Chang Chia-Wei, Shye Der-Chih, Hwang Chuan-Chou, Wang Jih-Liang, et al. Journal of Semiconductors, 2010, 31(6): 064003. doi: 10.1088/1674-4926/31/6/064003 |
| 9 |
A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS Hao Mingli, Shi Yin Journal of Semiconductors, 2010, 31(1): 015004. doi: 10.1088/1674-4926/31/1/015004 |
| 10 |
A wideband frequency synthesizer for a receiver application at multiple frequencies Wang Xiaosong, Huang Shuilong, Chen Pufeng, Lei Mumin, Li Zhiqiang, et al. Journal of Semiconductors, 2010, 31(3): 035003. doi: 10.1088/1674-4926/31/3/035003 |
| 11 |
RF-CMOS Modeling:RF-MOSFET Modeling for Low Power Applications Liu Jun, Sun Lingling, Xu Xiaojun Chinese Journal of Semiconductors , 2007, 28(1): 131-137. |
| 12 |
RTS Noise in Ultra-Thin Oxide nMOSFET under High Gate Bias Bao Li, Zhuang Yiqi, Bao Junlin, Li Weihua Chinese Journal of Semiconductors , 2007, 28(4): 576-581. |
| 13 |
Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET Bi Jinshun, Wu Junfeng, Hai Chaohe Chinese Journal of Semiconductors , 2006, 27(1): 35-40. |
| 14 |
A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique Liu Yu, Wang Guoyu Chinese Journal of Semiconductors , 2006, 27(2): 313-317. |
| 15 |
A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications Yan Jun, Mao Wei, Ma Desheng, Gu Ming, Xu Qiming, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1189-1195. |
| 16 |
A Method for Locating the Position of an Oxide Trap in a MOSFET by RTS Noise Bao Li, Bao Junlin, Zhuang Yiqi Chinese Journal of Semiconductors , 2006, 27(8): 1426-1430. |
| 17 |
An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs Li Ruizhen, Han Zhengsheng Chinese Journal of Semiconductors , 2005, 26(12): 2303-2308. |
| 18 |
Lumped Equivalent Circuit of Planar Spiral Inductor for CMOS RFIC Application Zhao Jixiang Chinese Journal of Semiconductors , 2005, 26(11): 2058-2061. |
| 19 |
W/TiN Gate Thin-Film Fully-Depleted SOI CMOS Devices Chinese Journal of Semiconductors , 2005, 26(1): 6-10. |
| 20 |
Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings Sui Xiaohong, Liu Jinbin, Gu Ming, Pei Weihua, Chen Hongda, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2275-2280. |
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Received: 18 August 2015 Revised: 05 April 2007 Online: Published: 01 September 2007
| Citation: |
Bao Li, Zhuang Yiqi, Ma Xiaohua, Bao Junlin. RTS Amplitude of 90nm MOS Devices in Sub-Threshold Region[J]. Journal of Semiconductors, 2007, 28(9): 1443-1447.
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Bao L, Zhuang Y Q, Ma X H, Bao J L. RTS Amplitude of 90nm MOS Devices in Sub-Threshold Region[J]. Chin. J. Semicond., 2007, 28(9): 1443.
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