Chin. J. Semicond. > 1998, Volume 19 > Issue 8 > 569-573
|

CONTENTS

氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响

王辉耀 , 王印月 , 宋青 and 王天民

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2440 Times PDF downloads: 1258 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 August 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(8): 569-573
      王辉耀, 王印月, 宋青, 王天民. 氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响[J]. 半导体学报(英文版), 1998, 19(8): 569-573.
      Citation:
      王辉耀, 王印月, 宋青, 王天民. 氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响[J]. 半导体学报(英文版), 1998, 19(8): 569-573.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return