Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1212-1216
|

CONTENTS

一种改进的VLSI关键面积计算模型和方法

马佩军 , 郝跃 and 寇芸

+ Author Affiliations

PDF

Key words: 缺陷, 关键面积, 成品率

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2561 Times PDF downloads: 1147 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1212-1216
      马佩军, 郝跃, 寇芸. 一种改进的VLSI关键面积计算模型和方法[J]. 半导体学报(英文版), 2001, 22(9): 1212-1216.
      Citation:
      马佩军, 郝跃, 寇芸. 一种改进的VLSI关键面积计算模型和方法[J]. 半导体学报(英文版), 2001, 22(9): 1212-1216.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return