Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 177-180
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几种掺杂浓度的GaAs表面Si-δ掺杂结构研究

刘兴权 , 陆卫 , 陈效双 , 乔怡敏 , 史国良 and 沈学础

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 177-180
      刘兴权, 陆卫, 陈效双, 乔怡敏, 史国良, 沈学础. 几种掺杂浓度的GaAs表面Si-δ掺杂结构研究[J]. 半导体学报(英文版), 1998, 19(3): 177-180.
      Citation:
      刘兴权, 陆卫, 陈效双, 乔怡敏, 史国良, 沈学础. 几种掺杂浓度的GaAs表面Si-δ掺杂结构研究[J]. 半导体学报(英文版), 1998, 19(3): 177-180.
      shu

      • Received Date: 2015-08-20

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