Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 382-387
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区熔硅近表面洁净区和体内微缺陷的形成

李传波 , 李怀祥 , 刘桂荣 , 郭成花 , 张华 and 薛成山

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Key words: 区熔硅, 微缺陷, 洁净区, 中子辐照掺杂

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 382-387
      李传波, 李怀祥, 刘桂荣, 郭成花, 张华, 薛成山. 区熔硅近表面洁净区和体内微缺陷的形成[J]. 半导体学报(英文版), 2002, 23(4): 382-387.
      Citation:
      李传波, 李怀祥, 刘桂荣, 郭成花, 张华, 薛成山. 区熔硅近表面洁净区和体内微缺陷的形成[J]. 半导体学报(英文版), 2002, 23(4): 382-387.
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      • Received Date: 2015-08-19

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