Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 354-358
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躺在石墨表面上的碳纳米管

刘虹雯 , 薛增泉 , 刘惟敏 , 施祖进 and 吴锦雷

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Key words: 碳纳米管, 石墨, I-V特性

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 354-358
      刘虹雯, 薛增泉, 刘惟敏, 施祖进, 吴锦雷. 躺在石墨表面上的碳纳米管[J]. 半导体学报(英文版), 2000, 21(4): 354-358.
      Citation:
      刘虹雯, 薛增泉, 刘惟敏, 施祖进, 吴锦雷. 躺在石墨表面上的碳纳米管[J]. 半导体学报(英文版), 2000, 21(4): 354-358.
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      • Received Date: 2015-08-20

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