| Citation: |
Liu Dan, Chen Xiaojuan, Liu Guoguo, He Zhijing, Liu Xinyu, Wu Dexin. A New AlGaN/GaN HEMT Semiempirical DC Model[J]. Journal of Semiconductors, 2006, 27(11): 1984-1988.
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Liu D, Chen X J, Liu G G, He Z J, Liu X Y, Wu D X. A New AlGaN/GaN HEMT Semiempirical DC Model[J]. Chin. J. Semicond., 2006, 27(11): 1984.
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A New AlGaN/GaN HEMT Semiempirical DC Model
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Abstract
A new AlGaN/GaN HEMT semiempirical DC model is given.This is the first model that takes into account the effect of the gate source voltages Vgs on the knee voltage.Functions describing the DC characteristic of the AlGaN/GaN HEMT are obtained.The model can be used to model the DC characteristic of AlGaN/GaN HEMTs based on sapphire as well as SiC.The error between results simulated by the model and the measured results is less than 3%.-
Keywords:
- AlGaN/GaN HEMT,
- model,
- knee voltage,
- substrate
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References
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Proportional views
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