Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 583-588
|

CONTENTS

亚0.1μm栅长CMOS器件和电路的研制

刘文安 , 黄如 and 张兴

+ Author Affiliations

PDF

Key words: 侧墙图形转移技术, 固相扩散, 源漏扩展区

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2308 Times PDF downloads: 863 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 583-588
      刘文安, 黄如, 张兴. 亚0.1μm栅长CMOS器件和电路的研制[J]. 半导体学报(英文版), 2004, 25(5): 583-588.
      Citation:
      刘文安, 黄如, 张兴. 亚0.1μm栅长CMOS器件和电路的研制[J]. 半导体学报(英文版), 2004, 25(5): 583-588.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return