Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 313-316
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立方GaAs(100)衬底上制备单相六方GaN薄膜

孙一军 , 李爱珍 and 齐鸣

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Key words: 金属有机化学气相沉积, 氮化镓, 砷化镓衬底, 六方结构

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 313-316
      孙一军, 李爱珍, 齐鸣. 立方GaAs(100)衬底上制备单相六方GaN薄膜[J]. 半导体学报(英文版), 2001, 22(3): 313-316.
      Citation:
      孙一军, 李爱珍, 齐鸣. 立方GaAs(100)衬底上制备单相六方GaN薄膜[J]. 半导体学报(英文版), 2001, 22(3): 313-316.
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      • Received Date: 2015-08-20

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