Chin. J. Semicond. > 1987, Volume 8 > Issue 3 > 305-307
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GaP(-1-1-1)-1×1表面的Ga3d化学位移

邢益荣

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(3): 305-307
      邢益荣. GaP(-1-1-1)-1×1表面的Ga3d化学位移[J]. 半导体学报(英文版), 1987, 8(3): 305-307.
      Citation:
      邢益荣. GaP(-1-1-1)-1×1表面的Ga3d化学位移[J]. 半导体学报(英文版), 1987, 8(3): 305-307.
      shu

      • Received Date: 2015-08-19

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