Chin. J. Semicond. > 1997, Volume 18 > Issue 7 > 544-549
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超薄氮氧化硅(Sio_xN_y)栅NMOSFET中GIDL效应的研究

刘卫东 , 李志坚 , 刘理天 , 田立林 , 陈文松 and 熊大箐

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(7): 544-549
      刘卫东, 李志坚, 刘理天, 田立林, 陈文松, 熊大箐. 超薄氮氧化硅(Sio_xN_y)栅NMOSFET中GIDL效应的研究[J]. 半导体学报(英文版), 1997, 18(7): 544-549.
      Citation:
      刘卫东, 李志坚, 刘理天, 田立林, 陈文松, 熊大箐. 超薄氮氧化硅(Sio_xN_y)栅NMOSFET中GIDL效应的研究[J]. 半导体学报(英文版), 1997, 18(7): 544-549.
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      • Received Date: 2015-08-19

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