J. Semicond. > 2024, Volume 45 > Issue 8 > 082401

ARTICLES

A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection

Kun Wang1, §, Wenxuan Lai1, §, Zhenyi Ni1, , Deren Yang1, 2 and Xiaodong Pi1, 2,

+ Author Affiliations

 Corresponding author: Zhenyi Ni, zyni@zju.edu.cn; Xiaodong Pi, xdpi@zju.edu.cn

DOI: 10.1088/1674-4926/24020018

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Abstract: Ratiometric fluorescent detection of iron(Ⅲ) (Fe3+) offers inherent self-calibration and contactless analytic capabilities. However, realizing a dual-emission near-infrared (NIR) nanosensor with a low limit of detection (LOD) is rather challenging. In this work, we report the synthesis of water-dispersible erbium-hyperdoped silicon quantum dots (Si QDs:Er), which emit NIR light at the wavelengths of 810 and 1540 nm. A dual-emission NIR nanosensor based on water-dispersible Si QDs:Er enables ratiometric Fe3+ detection with a very low LOD (0.06 μM). The effects of pH, recyclability, and the interplay between static and dynamic quenching mechanisms for Fe3+ detection have been systematically studied. In addition, we demonstrate that the nanosensor may be used to construct a sequential logic circuit with memory functions.

Key words: erbium-hyperdoped silicon quantum dotsdual-emission near-infrared nanosensorFe3+ detectionsequential logic circuit



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Fig. 1.  (Color online) (a) A diagrammatic representation of the water-dispersible F127-dodecyl-Si QDs:Er micelles. (b) Photographs under fluorescent lamp illumination of dodecyl-Si QDs:Er in toluene (left) and aqueous F127-dodecyl-Si QDs:Er assembled with 10 mg·mL−1 F127 (right). (c) TEM image of dodecyl-Si QDs:Er. An HR-TEM image is shown as the inset. (d) Dodecyl-Si QDs:Er size distribution. (e) PL spectral comparison between dodecyl-Si QDs:Er in toluene and aqueous F127-dodecyl-Si QDs:Er solutions at different F127 concentrations (2 to 20 mg·mL−1). (f) F127 concentration dependence of the F127-dodecyl-Si QDs:Er PL intensity. (g) Effect of F127 concentration on the PL peak wavelength (λ) for F127-dodecyl-Si QDs:Er.

Fig. 2.  (Color online) (a) PL spectra of F127-dodecyl-Si QDs:Er with varying Fe3+ concentrations. (b) Correlation between ratiometric fluorescence response and Fe3+ concentrations (0−100 mM). Linear fits of the intensity ratio versus Fe3+ concentration in the ranges of (c) 0−0.01 mM and (d) 10−100 mM. (e) Comparison of detection performance metrics to previously reported QDs-based Fe3+ nanosensors. (f) Selectivity and anti-interference of the F127-dodecyl-Si QDs:Er nanosensor. All metal ions present are at a concentration of 5 mM.

Fig. 3.  (Color online) (a) FTIR −OH peak of F127-dodecyl-Si QDs:Er with varying Fe3+ concentration. (b) PL lifetime of F127-dodecyl-Si QDs:Er under different Fe3+ concentrations. (c) O 1s XPS spectrum of F127-dodecyl-Si QDs:Er in the absence or presence of Fe3+. CFe = 5 mM. (d) Fe 2p XPS spectrum of FeCl3 in the absence or presence of F127-dodecyl-Si QDs:Er. CFe = 5 mM. (e) Schematic of the fluorescence quenching mechanism for F127-dodecyl-Si QDs:Er with Fe3+.

Fig. 4.  (Color online) (a) Bar plot of sequential logic function using the Δc and cT as inputs. (b) Output (OFF/ON) resulting from different input sequences and the corresponding truth tables. (c) Graphical illustration for the input of sequential logic function and crossword puzzle analogy.

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    Received: 18 February 2024 Revised: 23 April 2024 Online: Accepted Manuscript: 07 May 2024Uncorrected proof: 11 May 2024Published: 15 August 2024

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      Kun Wang, Wenxuan Lai, Zhenyi Ni, Deren Yang, Xiaodong Pi. A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection[J]. Journal of Semiconductors, 2024, 45(8): 082401. doi: 10.1088/1674-4926/24020018 ****K Wang, W X Lai, Z Y Ni, D R Yang, and X D Pi, A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection[J]. J. Semicond., 2024, 45(8), 082401 doi: 10.1088/1674-4926/24020018
      Citation:
      Kun Wang, Wenxuan Lai, Zhenyi Ni, Deren Yang, Xiaodong Pi. A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection[J]. Journal of Semiconductors, 2024, 45(8): 082401. doi: 10.1088/1674-4926/24020018 ****
      K Wang, W X Lai, Z Y Ni, D R Yang, and X D Pi, A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection[J]. J. Semicond., 2024, 45(8), 082401 doi: 10.1088/1674-4926/24020018

      A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection

      DOI: 10.1088/1674-4926/24020018
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      • Kun Wang obtained his B.S. degree from Guangxi University (2018) and his Ph.D. degree from Zhejiang University (2023). He currently holds a postdoctoral research in Hangzhou Innovation Center at Zhejiang University. His research mainly concerns silicon-based optoelectronic materials and devices
      • Wenxuan Lai is currently pursuing his undergraduate studies at Zhejiang University and is expected to graduate in 2024. He is engaged in undergraduate research projects and graduation design at the State Key Laboratory of Silicon and Advanced Semiconductor Materials at Zhejiang University. His academic interests lie in the application of semiconductor materials and nanomaterials
      • Zhenyi Ni received his Ph.D. degree at Zhejiang University in 2016. He then carried out research as a postdoctoral researcher at Zhejiang University and University of North Carolina at Chapel Hill. He joined Zhejiang University as a ZJU100 Young Professor in 2022. His research focuses on semiconductor devices and material physics
      • Deren Yang is an academician of Chinese Academy of Science, director of the State Key Laboratory of Silicon and Advanced Semiconductor Materials, and director of the Institute for Semiconductor Materials at Zhejiang University. He received his Ph.D. degree in 1991 at Zhejiang University. In the 1990s, he worked in Japan, Germany, and Sweden for several years as a visiting researcher. He has been engaged in research on silicon materials for microelectronic devices, solar cells and nanodevices
      • Xiaodong Pi received his Ph.D. degree at the University of Bath in 2004. He then carried out research at McMaster University and the University of Minnesota at Twin Cities. He joined Zhejiang University as an associate professor in 2008. He is now a professor in the State Key Laboratory of Silicon and Advanced Semiconductor Materials, the School of Materials Science & Engineering and Hangzhou Innovation Center at Zhejiang University. His research mainly concerns group Ⅳ semiconductor materials and devices
      • Corresponding author: zyni@zju.edu.cnxdpi@zju.edu.cn
      • Received Date: 2024-02-18
      • Revised Date: 2024-04-23
      • Available Online: 2024-05-07

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