J. Semicond. > 2024, Volume 45 > Issue 9 > 092403

ARTICLES

High-performance GaSb planar PN junction detector

Yuanzhi Cui1, 2, Hongyue Hao2, 3, , Shihao Zhang2, Shuo Wang2, Jing Zhang1, Yifan Shan2, 3, Ruoyu Xie2, 3, Xiaoyu Wang1, Chuang Wang1, Mengchen Liu1, Dongwei Jiang2, 3, Yingqiang Xu2, 3, Guowei Wang2, 3, Donghai Wu2, 3, Zhichuan Niu2, 3 and Derang Cao1

+ Author Affiliations

 Corresponding author: Hongyue Hao, haohongyue@semi.ac.cn

DOI: 10.1088/1674-4926/24040024

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Abstract: This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 1010 cm·Hz1/2/W, and a minimum dark current density of 1.02 × 10−5 A/cm2. Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.

Key words: antimonideshort-wave infraredplanar junctionzinc diffusion

At temperatures above absolute zero, any substance emits electromagnetic radiation due to the irregular movement of its internal molecules and atoms. In this context, infrared detectors capture information that visible detectors are unable to capture. Short-wave infrared detection has long played a significant role in many fields. For instance, its integration with intelligent agriculture is a key application, facilitating tasks such as detecting agricultural product damage[1] and sorting damaged or foreign materials[2]. Moreover, short-wave infrared detection finds applications in night vision, fire control, and medical imaging[3, 4]. Since infrared detection technology has observed development specifically relating to military and civilian areas[5], high-performance short-wavelength infrared photodetectors have emerged, leveraging materials such as HgCdTe (MCT) and InGaAs/InP[6, 7]. The short-wave detectors of these two material systems demonstrate excellent performance. Compared with traditional MCT infrared detectors[8], devices based on antimonide (Sb) materials have garnered considerable attention for their superior function, including reduced weight, smaller size, and lower cost. On the other hand, the larger substrate size[9] along with its compatibility with array technology, presents a wide range of potential applications[10].

There are two types of photodiodes: mesa and planar structures. Mesa structures are susceptible to surface leakage current, primarily due to the presence of mesa side walls, which significantly impact device performance. In contrast, planar PN junctions mitigate this issue. Planar structure photodetectors exhibit reduced dependency on surface treatment and passivation, simplifying the process of fabrication and lowering the cost of the detectors[11]. Additionally, antimonide substrates have enabled the growth of 6-inch substrates[12]. Using the planar junction process allows for the production of low-cost, large-array detectors without the need for material epitaxy.

Both ion implantation and high-temperature diffusion ovens are employed to create P-type doped regions[13]. Previous research suggests that thermal diffusion results in lower surface damage. In this study, high-performance planar structure photodiodes were fabricated on GaSb substrates. The research focuses on thermal diffusion experiments using Zn elements. Device performance is characterized through secondary ion mass spectrometry (SIMS) tests, surface morphology assessments, and photoelectric signal evaluations.

The chemical vapor deposition method was used to grow a 200 nm thickness of SiNx layer on the N-type GaSb substrate which acted as a mask to separate non-diffusion areas[14]. Numerous experiments have validated that area-selective diffusion can mitigate edge leakage current and enhance performance[15]. The selected diffusion areas were created via inductively coupled plasma (ICP) dry etching. Following surface cleaning with acetone and anhydrous ethanol, hydrochloric acid was applied to remove surface oxide. Finally, the Zn source was used as the thermal diffusion source, as shown in Fig. 1. Residual SiNx was etched using buffer oxide etch (BOE) to expose the substrate for electrode fabrication. Electrodes were fabricated through sputtering Ti/Pt/Au. The signal output of the subsequent test was obtained from the bonding pad. Fig. 1 illustrates the structure of the planner junction devices and the SEM diagram of fabricated devices.

Fig. 1.  (Color online) (a) The process of planar structure photodiode fabrication through diffusion and the final device structure. (b) SEM diagram of the fabricated devices.

The doping curve was measured using SIMS[16]. The estimated diffusion depths ranged from 350 to 1750 nm as the diffusion temperature increased from 400 to 550 °C, as illustrated in Fig. 2(a). The diffusion depth exhibited greater sensitivity to changes in temperature between 420 and 500 °C. At lower diffusion temperatures, it was challenging for Zn atoms to diffuse into the lattice. In contrast, excessively high diffusion temperatures not only failed to increase the diffusion depth further but also led to surface damage of the GaSb material, as shown in Fig. 2(b). Fig. 3 is the cross-section TEM image and mapping energy spectrum of fabricated planar PN junction detector, the distribution of Zn atoms can be clearly seen in the diagram.

Fig. 2.  (Color online) (a) SIMS test results. (b) The relationship between diffusion depth and diffusion temperature.
Fig. 3.  (Color online) (a) The cross-section TEM image and (b) mapping energy spectrum of fabricated planar PN junction detector.

The contrast of Zn diffusion region in HAADF dark field image was not enough to distinguish the diffusion region in Fig. 3(a). However, Zn element can be obviously observed in EDS spectrum in Fig. 3(b). The red line was the relationship between normalized diffusion concentration and diffusion depth. The zero-point started from the surface of sample. After that, we simulated the energy band gaps of 450 and 550 °C devices, as shown in Fig. 4.

Fig. 4.  (Color online) Simulation result of band structure based on SIMS data with a diffusion temperature of (a) 450 °C and (b) 550 °C.

The device performance was tested through I−V measurements, Fourier transform infrared spectrometer (FTIR), and black body radiometer. Fig. 5 depicts the relationship between dark current density/differential resistance area product and bias for two devices of 700 μm diameter at room temperature. Fig. 6 shows the dark current mechanism at various test temperatures. At a bias of 0 mV, the dark current density was 1.02 × 10−5 A/cm2, with R0A at 133.5 Ω·cm2 for a diffusion temperature of 550 °C. For a diffusion temperature of 450 °C, the dark current density was 6.3 × 10−4 A/cm2 at 0 mV bias, with R0A at 30.3 Ω·cm2. The device fabricated at 550 °C diffusion temperature performed approximately ten times better than the 450 °C sample. It can be seen from the band gap diagram that moderately increasing the doping concentration helped to reduce the diffusion current and depletion region current, thereby reducing the dark current of the device[17].

Fig. 5.  (Color online) The relationship between dark current density and bias at different temperatures for devices with diffusion temperatures of 450 and 550 °C.
Fig. 6.  (Color online) The dark current mechanism of samples diffused at 450 and 550 °C.

The main dark current mechanism observed in the sample diffused at 550 °C was constrained by both the generation-recombination and tunneling mechanisms (ΔE < Eg/2). At 300−260 K, the activation energy was ΔE = 0.283 eV; at 240−200 K, it was ΔE = 0.149 eV; and at 180−140 K, it was ΔE = 0.058 eV. However, at 300−280 K, the activation energy of the 450 °C diffused sample is ΔE = 0.48 eV (ΔE > Eg/2), indicating that the Shockley−Read−Hall (SHR) generation, recombination, and diffusion currents were the primary contributors to the dark current. The dark current mechanism of this set of devices at 300 K verified the results of the band gap analysis. Furthermore, the mechanisms observed at 260 to 180 K and 160 to 140 K were a combination of generation-recombination and tunneling currents. To calculate the activation energy, we followed the slope of the fitted curve (−ΔE/KBT), where KB represents Boltzmann constant.

The quantum efficiency (η) and specific detectivity (D*) were measured through FTIR and black body infrared radiation tests. These parameters reflect the device's ability to generate photo-generated charge carriers and its detection capability.

Fig. 7(a) shows the performance curve and wavelength of the photodiode fabricated with a diffusion temperature of 550 °C. The maximum quantum efficiency reached 60.3%, with the maximum specific detectivity at 8.73 × 1010 cm·Hz1/2/W at 1.54 µm. These values indicate that the device has achieved an imageable level, signifying the feasibility of fabricating focal plane chips and other complex devices using this method. Additionally, due to the red-shift observed during room temperature testing, the actual 50% cut-off wavelength is approximately 1.73 μm. Fig. 7(b) illustrates the performance curve and wavelength of the photodiode fabricated with a diffusion temperature of 450 °C. Here, the maximum quantum efficiency was only 1.7%, with the maximum specific detectivity at only 1.27 × 109 cm·Hz1/2/W.

Fig. 7.  Performance curve and wavelength of the photodiode with a diffusion temperature of (a) 550 °C and (b) 450 °C.

Finally, the performance comparison of the planar junction detectors is summarized in Table 1. The device fabricated with a diffusion temperature of 550 °C exhibited superior performance due to its greater PN junction depth. However, the sample diffused at 450 °C failed to meet expectations due to the short diffusion time and lower temperature, potentially resulting in lower doping concentration and uneven diffusion. This issue could be addressed by increasing the diffusion time to facilitate a comparative experiment. Through repeated experiments, a stable relationship between temperature, doping, and device performance can be established.

Table 1.  Performance comparison of planar junction detectors at different diffusion temperatures.
Diffusion temperature (°C) Test temperature (K) R0A (Ω·cm2) η (%) D* (cm·Hz1/2/W)
450 300 30.3 1.7 1.27 × 109
550 300 133.5 60.3 8.73 × 1010
DownLoad: CSV  | Show Table

A 320 × 256 pixel focal plane array was fabricated using the same process as the individual devices, with a diffusion temperature of 550 °C. After depositing metal and indium bumps on both the focal plane array chip and the readout integrated circuit (ROIC), they were aligned and brought into contact using a flip-chip bonding process. Subsequently, the GaSb substrate was thinned to 50 μm via chemical mechanical polishing (CMP) to facilitate back-illumination[18]. The focal plane array featured a pixel distance of 30 μm, with each photosensitive surface area measuring 25 μm to minimize pixel crosstalk. Finally, the infrared radiation imaging of an electric soldering iron and lighter flame is depicted in Fig. 8.

Fig. 8.  Infrared radiation imaging of (a) electric soldering iron and (b) lighter flame.

The focal plane array operates at room temperature, with a blind pixel rate of 1.25%. It exhibits excellent uniformity, performance, and stability at room temperature, demonstrating promising potential for low-cost, large focal plane arrays in the short wavelength range.

This paper presents high-performance GaSb short-wavelength photodiodes and focal plane arrays with a 50% cut-off wavelength of 1.73 μm at room temperature. With a diffusion temperature of 550 °C, the maximum quantum efficiency reached 60.3%, and the maximum detectivity reached 8.73 × 1010 cm·Hz1/2/W (at 1.54 μm). Our analysis indicates that the main dark current mechanism is attributed to factors other than surface leakage current, as there are no mesa sidewalls present. The dark current density was 1.02 × 10−5 A/cm2 at a bias of 0 mV, with an R0A value of 133.5 Ω·cm2. The 320 × 256 focal plane array demonstrated good imaging results and stability at room temperature. Compared to InP/InGaAs-based short-wavelength photodiodes, GaSb photodiodes can be fabricated without material deposition, suggesting promising potential for low-cost, large focal plane arrays in the short wavelength range.



[1]
Zhang D, Lee D J, Desai A. Using short-wave infrared imaging for fruit quality evaluation. Intelligent Robots and Computer Vision XXXI: Algorithms and Techniques, 2014, 9025, 89 doi: 10.1117/12.2045406
[2]
Mo C, Kim G, Kim M S, et al. Discrimination methods for biological contaminants in fresh-cut lettuce based on VNIR and NIR hyperspectral imaging. Infrared Phys Technol, 2017, 85, 1 doi: 10.1016/j.infrared.2017.05.003
[3]
Jenal A, Bareth G, Bolten A, et al. Development of a VNIR/SWIR multispectral imaging system for vegetation monitoring with unmanned aerial vehicles. Sensors, 2019, 19, 5507 doi: 10.3390/s19245507
[4]
Hou F, Zhang Y, Zhou Y, et al. Review on infrared imaging technology. Sustainability, 2022, 14, 11161 doi: 10.3390/su141811161
[5]
Kütük M, Geneci İ, Özdemir O B, et al. Ground-based hyperspectral image surveillance system for explosive detection: methods, experiments, and comparisons. IEEE J Sel Top Appl Earth Obs Remote Sens, 2023, 16, 8747 doi: 10.1109/JSTARS.2023.3299730
[6]
Yang D, Lin J, Lin C, et al. Improved responsivity and detectivity of LPE HgCdTe short-wavelength infrared photodetector by tuning the composition gradient. Solid State Electron, 2023, 205, 108665 doi: 10.1016/j.sse.2023.108665
[7]
Dolas M H, Atesal O, Caliskan M D, et al. Low dark current diffusion limited planar type InGaAs photodetectors. Infrared Sensors, Devices, and Applications IX, 2019, 11129, 91 doi: 10.1117/12.2528666
[8]
Hoang A, Chen G, Haddadi A, et al. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices. Appl Phys Lett, 2012, 100, 211101 doi: 10.1063/1.4720094
[9]
Yan B, Liu W, Yu Z, et al. Temperature dynamic compensation vertical bridgman method growth of high-quality GaSb single crystals. J Cryst Growth, 2023, 602, 126988 doi: 10.1016/j.jcrysgro.2022.126988
[10]
Nunna K C, Tan S L, Reyner C J, et al. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique. IEEE Photonics Technol Lett, 2011, 24, 218 doi: 10.1109/LPT.2011.2177253
[11]
Li J, Saroj R, Slivken S, et al. High performance planar antimony-based superlattice photodetectors using zinc diffusion grown by MBE. Photonics, 2022, 9, 664 doi: 10.3390/photonics9090664
[12]
Gray N W, Prax A, Johnson D, et al. Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications. Infrared Technology and Applications XLII, 2016, 9819, 274 doi: 10.1117/12.2223998
[13]
Li Z H, Li H Y, Du H Y, et al. Study of InSb IRFPA with planar PN junctions. Laser Infrared, 2015, 45, 814 (in Chinese) doi: 10.3969/j.issn.1001-5078.2015.07.017
[14]
Lim K, Pham H, Yoon S, et al. InSb1-xNx/InSb/GaAs alloys by thermal annealing for midinfrared photodetection. Appl Phys Lett, 2010, 97, 221112 doi: 10.1063/1.3524228
[15]
Kang Z, Qiu G C. InSb IRFPA detector chip with planar PN junction based on thermal diffusion method. Laser Infrared, 2014, 44, 757 (in Chinese) doi: 10.3969/j.issn.1001-5078.2014.06.011
[16]
Simcock M N, Santailler J L, Dusserre P, et al. Zinc diffusion in GaSb for thermophotovoltaic cell applications. AIP Conf Proc, 2004, 738, 303 doi: 10.1063/1.1841907
[17]
Newell A, Logan J, Carrasco R, et al. Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance. Appl Phys Lett, 2023, 122, 171102 doi: 10.1063/5.0136409
[18]
Hao H, Wang G, Xiang W, et al. Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays. Infrared Phys Technol, 2015, 72, 276 doi: 10.1016/j.infrared.2015.07.025
Fig. 1.  (Color online) (a) The process of planar structure photodiode fabrication through diffusion and the final device structure. (b) SEM diagram of the fabricated devices.

Fig. 2.  (Color online) (a) SIMS test results. (b) The relationship between diffusion depth and diffusion temperature.

Fig. 3.  (Color online) (a) The cross-section TEM image and (b) mapping energy spectrum of fabricated planar PN junction detector.

Fig. 4.  (Color online) Simulation result of band structure based on SIMS data with a diffusion temperature of (a) 450 °C and (b) 550 °C.

Fig. 5.  (Color online) The relationship between dark current density and bias at different temperatures for devices with diffusion temperatures of 450 and 550 °C.

Fig. 6.  (Color online) The dark current mechanism of samples diffused at 450 and 550 °C.

Fig. 7.  Performance curve and wavelength of the photodiode with a diffusion temperature of (a) 550 °C and (b) 450 °C.

Fig. 8.  Infrared radiation imaging of (a) electric soldering iron and (b) lighter flame.

Table 1.   Performance comparison of planar junction detectors at different diffusion temperatures.

Diffusion temperature (°C) Test temperature (K) R0A (Ω·cm2) η (%) D* (cm·Hz1/2/W)
450 300 30.3 1.7 1.27 × 109
550 300 133.5 60.3 8.73 × 1010
DownLoad: CSV
[1]
Zhang D, Lee D J, Desai A. Using short-wave infrared imaging for fruit quality evaluation. Intelligent Robots and Computer Vision XXXI: Algorithms and Techniques, 2014, 9025, 89 doi: 10.1117/12.2045406
[2]
Mo C, Kim G, Kim M S, et al. Discrimination methods for biological contaminants in fresh-cut lettuce based on VNIR and NIR hyperspectral imaging. Infrared Phys Technol, 2017, 85, 1 doi: 10.1016/j.infrared.2017.05.003
[3]
Jenal A, Bareth G, Bolten A, et al. Development of a VNIR/SWIR multispectral imaging system for vegetation monitoring with unmanned aerial vehicles. Sensors, 2019, 19, 5507 doi: 10.3390/s19245507
[4]
Hou F, Zhang Y, Zhou Y, et al. Review on infrared imaging technology. Sustainability, 2022, 14, 11161 doi: 10.3390/su141811161
[5]
Kütük M, Geneci İ, Özdemir O B, et al. Ground-based hyperspectral image surveillance system for explosive detection: methods, experiments, and comparisons. IEEE J Sel Top Appl Earth Obs Remote Sens, 2023, 16, 8747 doi: 10.1109/JSTARS.2023.3299730
[6]
Yang D, Lin J, Lin C, et al. Improved responsivity and detectivity of LPE HgCdTe short-wavelength infrared photodetector by tuning the composition gradient. Solid State Electron, 2023, 205, 108665 doi: 10.1016/j.sse.2023.108665
[7]
Dolas M H, Atesal O, Caliskan M D, et al. Low dark current diffusion limited planar type InGaAs photodetectors. Infrared Sensors, Devices, and Applications IX, 2019, 11129, 91 doi: 10.1117/12.2528666
[8]
Hoang A, Chen G, Haddadi A, et al. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices. Appl Phys Lett, 2012, 100, 211101 doi: 10.1063/1.4720094
[9]
Yan B, Liu W, Yu Z, et al. Temperature dynamic compensation vertical bridgman method growth of high-quality GaSb single crystals. J Cryst Growth, 2023, 602, 126988 doi: 10.1016/j.jcrysgro.2022.126988
[10]
Nunna K C, Tan S L, Reyner C J, et al. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique. IEEE Photonics Technol Lett, 2011, 24, 218 doi: 10.1109/LPT.2011.2177253
[11]
Li J, Saroj R, Slivken S, et al. High performance planar antimony-based superlattice photodetectors using zinc diffusion grown by MBE. Photonics, 2022, 9, 664 doi: 10.3390/photonics9090664
[12]
Gray N W, Prax A, Johnson D, et al. Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications. Infrared Technology and Applications XLII, 2016, 9819, 274 doi: 10.1117/12.2223998
[13]
Li Z H, Li H Y, Du H Y, et al. Study of InSb IRFPA with planar PN junctions. Laser Infrared, 2015, 45, 814 (in Chinese) doi: 10.3969/j.issn.1001-5078.2015.07.017
[14]
Lim K, Pham H, Yoon S, et al. InSb1-xNx/InSb/GaAs alloys by thermal annealing for midinfrared photodetection. Appl Phys Lett, 2010, 97, 221112 doi: 10.1063/1.3524228
[15]
Kang Z, Qiu G C. InSb IRFPA detector chip with planar PN junction based on thermal diffusion method. Laser Infrared, 2014, 44, 757 (in Chinese) doi: 10.3969/j.issn.1001-5078.2014.06.011
[16]
Simcock M N, Santailler J L, Dusserre P, et al. Zinc diffusion in GaSb for thermophotovoltaic cell applications. AIP Conf Proc, 2004, 738, 303 doi: 10.1063/1.1841907
[17]
Newell A, Logan J, Carrasco R, et al. Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance. Appl Phys Lett, 2023, 122, 171102 doi: 10.1063/5.0136409
[18]
Hao H, Wang G, Xiang W, et al. Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays. Infrared Phys Technol, 2015, 72, 276 doi: 10.1016/j.infrared.2015.07.025
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    Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao. High-performance GaSb planar PN junction detector[J]. Journal of Semiconductors, 2024, 45(9): 092403. doi: 10.1088/1674-4926/24040024
    Y Z Cui, H Y Hao, S H Zhang, S Wang, J Zhang, Y F Shan, R Y Xie, X Y Wang, C Wang, M C Liu, D W Jiang, Y Q Xu, G W Wang, D H Wu, Z C Niu, and D R Cao, High-performance GaSb planar PN junction detector[J]. J. Semicond., 2024, 45(9), 092403 doi: 10.1088/1674-4926/24040024
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    Received: 16 April 2024 Revised: 21 May 2024 Online: Accepted Manuscript: 11 June 2024Uncorrected proof: 11 June 2024Published: 15 September 2024

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      Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao. High-performance GaSb planar PN junction detector[J]. Journal of Semiconductors, 2024, 45(9): 092403. doi: 10.1088/1674-4926/24040024 ****Y Z Cui, H Y Hao, S H Zhang, S Wang, J Zhang, Y F Shan, R Y Xie, X Y Wang, C Wang, M C Liu, D W Jiang, Y Q Xu, G W Wang, D H Wu, Z C Niu, and D R Cao, High-performance GaSb planar PN junction detector[J]. J. Semicond., 2024, 45(9), 092403 doi: 10.1088/1674-4926/24040024
      Citation:
      Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao. High-performance GaSb planar PN junction detector[J]. Journal of Semiconductors, 2024, 45(9): 092403. doi: 10.1088/1674-4926/24040024 ****
      Y Z Cui, H Y Hao, S H Zhang, S Wang, J Zhang, Y F Shan, R Y Xie, X Y Wang, C Wang, M C Liu, D W Jiang, Y Q Xu, G W Wang, D H Wu, Z C Niu, and D R Cao, High-performance GaSb planar PN junction detector[J]. J. Semicond., 2024, 45(9), 092403 doi: 10.1088/1674-4926/24040024

      High-performance GaSb planar PN junction detector

      DOI: 10.1088/1674-4926/24040024
      More Information
      • Yuanzhi Cui received a bachelor’s degree from North China University of Technology, Beijing, China, in 2021. He is currently pursuing a master’s degree with the Qingdao University, Qingdao, China. His present research interests include short−wave infrared detector of antimonide
      • Hongyue Hao received her doctoral degree from the Institute of Semiconductors, Chinese Academy of Sciences in 2018. Following her PhD, she worked as a postdoctoral researcher in the Juelich Research Center in Germany. She is currently a Youth Researcher at the Institute of Semiconductors, Chinese Academy of Sciences. Her research focused on the Sb-based infrared detectors, especially including the broadband and multi-band detectors with meta-surface, low-cost, low noise and high sensitivity detectors
      • Corresponding author: haohongyue@semi.ac.cn
      • Received Date: 2024-04-16
      • Revised Date: 2024-05-21
      • Available Online: 2024-06-11

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