A simple and effective carrier lifetime characterization for semiconductor thin films

Bao Quy Le; Tuan Nguyen Van; Dat Tran Quang; Vi Le Dinh; Thin Pham Van; Nguyen Cuc Thi Kim

doi:10.1088/1674-4926/24090005

J. Semicond. > In Press

ARTICLES

A simple and effective carrier lifetime characterization for semiconductor thin films

Bao Quy Le¹, Tuan Nguyen Van², Dat Tran Quang², Vi Le Dinh², Thin Pham Van² and Nguyen Cuc Thi Kim^1,

+ Author Affiliations

1. Precision Engineering & Smart measurements Lab, School of Mechanical Engineering, Hanoi University of Science and Technology, 1 Dai Co Viet, 100000 Hanoi, Vietnam
2. Department of Physics, Le Quy Don Technical University, 100000 Hanoi, Viet Nam

Author Bio:

Bao Quy Le Bao Le Quy received the B.E. (2008), M.E. (2010), degrees in mechanical engineering from Hanoi University of Science and Technology HUST, Vietnam. He is now a Ph.D student at HUST. He is interested in researching optical thin films and their applications in thermal imaging. He has experience working on interdisciplinary projects and wishes to contribute to the development of materials science and photonics.

Tuan Nguyen Van received the Ph.D. degree from Université de Limoges et Institut Néel-France, in 2021. He is currently a senior lecturer and researcher at Le Quy Don Technical University, Hanoi, Vietnam. His current research interests include research and applications of multiphase high-performance magnets, spintronics, magnetic sensors, and semiconductor devices.

Dat Tran Quang received his Ph.D. in 2018 from the Institute of Military Science and Technology, Vietnam. He is currently a Senior Lecturer and Head of the Laboratory at the Faculty of Technical Physics and Chemistry, Le Quy Don Technical University, Vietnam. His research focuses on advanced material synthesis and characterization using evaporation, sputtering, and CVD. He specializes in semiconductor optics and electronics, as well as materials for heavy metal ion adsorption and electromagnetic wave absorption.

Vi Le Dinh graduated with a Bachelor's degree in Engineering in 2011 from Belarusian State University of Informatics and Radioelectronics. He then earned his Master's degree in 2017 and his Ph.D. in 2020 from the same institution. Currently, Le Dinh Vi is a lecturer at Le Quy Don Technical University in Hanoi, Vietnam. His research focuses on semiconductor materials, nanoporous materials, and electronic devices.

Thin Pham Van obtained the Bachelor, Master, and Doctor degrees from VNU University of Science, in 1999, 2004, and 2015 respectively. He is now head of Department of Physics at Le Quy Don Technical University in Hanoi, Vietnam. He currently focuses on various topics including electronic devices, wide-range microwave absorbing materials, and infrared photodectors.

Nguyen Cuc Thi Kim received the B.E. (2008), M.E. (2011), and Ph.D. (2019) degrees in mechanical engineering from Hanoi University of Science and Technology (HUST), Vietnam. She is currently a lecturer in the Department of Precision Mechanical and Optical Engineering, School of Mechanical Engineering of HUST. Her current interests include 3D accurate measurement, laser applications, semiconductor optics and devices, and medical instrument fabrication.

Corresponding author: Nguyen Cuc Thi Kim, cuc.nguyenthikim@hust.edu.vn

DOI: 10.1088/1674-4926/24090005CSTR: 32376.14.1674-4926.24090005

Abstract: Minority carrier lifetimes τ are a fundamental parameter in semiconductor devices, representing the average time it takes for excess minority carriers to recombine. This characteristic is crucial for understanding and optimizing the performance of semiconductor materials, as it directly influences charge carrier dynamics and overall device efficiency. This work presents a development of PbS thin film deposited by thermal evaporation, at which the PbS thin film was further employed for structural, optical properties, and τ. Especially, the PbS film is probed with an in-house setup for identifying the τ. The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency. The derived τ in the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence. Therefore, the in-house setup provides additional tools for identifying the τ values for semiconductor devices.

Key words: semiconductors, minority carrier lifetime, open circuit voltage decay, PbS thin films

References

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Fig. 1. (Color online) (a) The schematic of n⁺−p−p⁺ diode in the forward biased steady state condition for establishing the theoretical background of the COCVD, and (b) the representatively theoretical OCVD curve at which three distinctive regions could be distinguished corresponding to different injection levels, i.e., high level (1^st region), intermediate level (2^nd region), and low level (3^rd region).

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Fig. 2. (Color online) (a) The schematic developed MOCVD test setup, with detailed associated devices, and (b) the real 3D arranged componential parts on the optical tray.

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Fig. 3. (Color online) The three developed PbS photodetectors developed in this study (a), (b), and (c).

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Fig. 4. (Color online) (a) The XRD pattern of the developed PbS thin film in the scanning range from 20° to 80°, and (b) the Williamson−Hall plot.

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Fig. 5. (Color online) Raman spectroscopy of the PbS thin film, at which the Raman shift is deconvoluted into the componential peaks.

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Fig. 6. (Color online) Transmittance and derived absorption coefficient spectra of 1 µm PbS thin film as function of the wavelength.

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Fig. 7. (Color online) The TRPL signal over time for the 1 µm PbS thin film at various wavelength excitation.

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Fig. 8. (Color online) (a) The dependence of V_oc signal overtime at distinct chopper frequency ranging from 100 to 400 Hz, with power supply of 24 W to the light source, and (b) at various power supplies from 12 to 36 W at 300 Hz of chopper frequency.

DownLoad: Full-Size Img PowerPoint

Fig. 9. (Color online) The analyzing process in the MOCVD setup. (a) and (c) The dependence of V_oc signal overtime at a scanning time; (b) and (d) typical regions in the OCVD curves corresponding to the fitting with either linear or bi-exponential decay function, which allows to indirectly estimate the minority carrier lifetimes of developed thin films; and (e) the statistical estimation for the minority carrier lifetimes derived from 50 MOCVD curves corresponding to the 1^st, 2^nd, and 3^rd regions.

DownLoad: Full-Size Img PowerPoint

[1]	Schroder D K. Semiconductor material and device characterization. Wiley, 2005, 12 doi: 10.1002/0471749095
[2]	Diasso A, Sam R, Zouma B, et al. Experimental measurement of minority carriers effective lifetime in silicon solar cell using open circuit voltage decay under magnetic field in transient mode. Smart Grid Renew Energy, 2020, 11(11), 181 doi: 10.4236/sgre.2020.1111011
[3]	Li X X, He J H. A simplified formulation for calculation of minority-carrier effective lifetime. Results Phys, 2018, 11, 623 doi: 10.1016/j.rinp.2018.10.008
[4]	Lemaire A, Perona A, Caussanel M, et al. Open-circuit voltage decay simulations on silicon and gallium arsenide p-n homojunctions: Design influences on bulk lifetime extraction. Microelectron J, 2020, 101, 104735 doi: 10.1016/j.mejo.2020.104735
[5]	Gossick B R. On the transient behavior of semiconductor rectifiers. Journal of Applied Physics, 1955, 26(11), 1356 doi: 10.1063/1.1721908
[6]	Choo S C, Mazur R G. Open circuit voltage decay behavior of junction devices. Solid State Electron, 1970, 13(5), 553 doi: 10.1016/0038-1101(70)90136-X
[7]	Wilson P G. Recombination in silicon p−π−n diodes. Solid State Electron, 1967, 10(2), 145 doi: 10.1016/0038-1101(67)90032-9
[8]	Davies L W. The use of P-L-N structures in investigations of transient recombination from high injection levels in semiconductors. Proc IEEE, 1963, 51(11), 1637 doi: 10.1109/PROC.1963.2639
[9]	Ko W H. The reverse transient behavior of semiconductor junction diodes. IRE Trans Electron Devices, 1961, 8(2), 123 doi: 10.1109/T-ED.1961.14719
[10]	Bassett R J, Eulop W, Hogarth C A. Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode, by the method of open circuit voltage decay. Int J Electron, 1973, 35(2), 177 doi: 10.1080/00207217308938533
[11]	Bassett R J. Observations on a method of determining the carrier lifetime in p +-ν-n + diodes. Solid State Electron, 1969, 12(5), 385 doi: 10.1016/0038-1101(69)90094-X
[12]	Davies L W. Electron-hole scattering at high injection-levels in germanium. Nature, 1962, 194, 762 doi: 10.1038/194762a0
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[15]	Liu S L, Fei G T, Xu S H, et al. High-performance visible-near IR photodetectors based on high-quality Sn 2+ -sensitized PbS films. J Alloys Compd, 2021, 883, 160860 doi: 10.1016/j.jallcom.2021.160860
[16]	Yin X T, Zhang C, Guo Y X, et al. PbS QD-based photodetectors: Future-oriented near-infrared detection technology. J Mater Chem C, 2021, 9(2), 417 doi: 10.1039/D0TC04612D
[17]	Gao L F, Chen H L, Wang R, et al. Ultra-small 2D PbS nanoplatelets: Liquid-phase exfoliation and emerging applications for photo-electrochemical photodetectors. Small, 2021, 17(5), 2005913 doi: 10.1002/smll.202005913
[18]	Kumar S, Sharma T P, Zulfequar M, et al. Characterization of vacuum evaporated PbS thin films. Phys B: Condens Matter, 2003, 325, 8 doi: 10.1016/S0921-4526(02)01272-3
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[20]	Van T N, Laborde E, Champeaux C, et al. Tunability of optical properties of InSb films developed by pulsed laser deposition. Appl Surf Sci, 2023, 619, 156756 doi: 10.1016/j.apsusc.2023.156756
[21]	Nanda K K, Sahu S N, Soni R K, et al. Raman spectroscopy of PbS nanocrystalline semiconductors. Phys Rev B, 1998, 58(23), 15405 doi: 10.1103/PhysRevB.58.15405
[22]	Xiong S L, Xi B J, Xu D C, et al. L-cysteine-assisted tunable synthesis of PbS of various morphologies. J Phys Chem C, 2007, 111(45), 16761 doi: 10.1021/jp075096z
[23]	Smith G D, Firth S, Clark R J H, et al. First- and second-order Raman spectra of galena (PbS). Journal of Applied Physics, 2002, 92.8, 4375-4380 doi: 10.1063/1.1505670
[24]	Krauss T D, Wise F W. Raman-scattering study of exciton-phonon coupling in PbS nanocrystals. Phys Rev B, 1997, 55(15), 9860 doi: 10.1103/PhysRevB.55.9860
[25]	Cao H Q, Wang G Z, Zhang S C, et al. Growth and photoluminescence properties of PbS nanocubes. Nanotechnology, 2006, 17(13), 3280 doi: 10.1088/0957-4484/17/13/034
[26]	Krauss T D, Wise F W, Tanner D B. Observation of coupled vibrational modes of a semiconductor nanocrystal. Phys Rev Lett, 1996, 76(8), 1376 doi: 10.1103/PhysRevLett.76.1376
[27]	Rivera-Nieblas J O, Alvarado-Rivera J, Acosta-Enríquez M C, et al. Resistance and resistivities of pbs thin films using polyethylenimine by chemical bath deposition. Chalcogenide Lett, 2013, 10, 349 doi: 2-s2.0-84884967604
[28]	Tauc J. Amorphous and liquid semiconductors. Boston, MA: Springer US, 1974, 1 doi: 10.1007/978-1-4615-8705-7
[29]	Shahane G S, More B M, Rotti C B, et al. Studies on chemically deposited CdS_{1− x}Se_x mixed thin films. Mater Chem Phys, 1997, 47(2/3), 263 doi: 10.1016/S0254-0584(97)80062-4
[30]	Lee W, Dasgupta N P, Jung H J, et al. Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition. Nanotechnology, 2010, 21(48), 485402 doi: 10.1088/0957-4484/21/48/485402
[31]	Ahrenkiel, Richard K, Lundstrom M S. Chapter 2 minority-carrier lifetime in III–V semiconductors ed. Academic Press Semiconductors and Semimetals, 1993, 39, 39 doi: 10.1016/S0080-8784(08)62594-6
[32]	Donahoe F J. Electronic semiconductors. J Frankl Inst, 1958, 266(5), 419
[33]	Connelly B C, Metcalfe G D, Shen H E, et al. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence. Applied physics letters, 2010, 97(25), 2511, 17 doi: 10.1063/1.3529458
[34]	Keitel R C, Brechbühler R, Cocina A, et al. Fluctuations in the photoluminescence excitation spectra of individual semiconductor nanocrystals. J Phys Chem Lett, 2024, 15(18), 4844 doi: 10.1021/acs.jpclett.4c00516
[35]	Bhosale J S, Moore J E, Wang X, et al. Steady-state photoluminescent excitation characterization of semiconductor carrier recombination. Review of Scientific Instruments, 2016, 87(1), 0131, 04 doi: 10.1063/1.4939047
[36]	Hariharan A, Schäfer S, Heise S J. Decay of excess carriers in a two-defect model semiconductor: A time-resolved photoluminescence study. Journal of Applied Physics, 2021, 130(23), 2357, 02 doi: 10.1063/5.0065600
[37]	Krückemeier L, Krogmeier B, Liu Z F, et al. Understanding transient photoluminescence in halide perovskite layer stacks and solar cells. Adv Energy Mater, 2021, 11(19), 2003489 doi: 10.1002/aenm.202003489
[38]	Endale G. Effects of transition energy on intra-band photoluminescence of zinc oxide (ZnO) semiconductor under low injection level. Ujms, 2019, 7(3), 35 doi: 10.13189/ujms.2019.070301
[39]	Semyonov O, Subashiev A V, Chen Z C, et al. Photon assisted Lévy flights of minority carriers in n-InP. J Lumin, 2012, 132(8), 1935 doi: 10.1016/j.jlumin.2012.03.035
[40]	Nguyen H T, Phang S P, Wong-Leung J, et al. Photoluminescence excitation spectroscopy of diffused layers on crystalline silicon wafers. IEEE J Photovolt, 2016, 6(3), 746 doi: 10.1109/JPHOTOV.2016.2532460
[41]	Kirchartz T, Márquez J A, Stolterfoht M, et al. Photoluminescence-based characterization of halide perovskites for photovoltaics. Adv Energy Mater, 2020, 10(26), 1904134 doi: 10.1002/aenm.201904134
[42]	Dev S, Wang Y N, Kim K, et al. Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits. Nat Commun, 2019, 10(1), 1625 doi: 10.1038/s41467-019-09602-2
[43]	Lemaire A, Perona A, Caussanel M, et al. Open-circuit voltage decay: Moving to a flexible method of characterisation. IET Circuits Devices Syst, 2020, 14(7), 947 doi: 10.1049/iet-cds.2020.0123
[44]	Sakata I, Hayashi Y. Open-circuit voltage decay (OCVD) measurement applied to hydrogenated amorphous silicon solar cells. Jpn J Appl Phys, 1990, 29(1A), L27 doi: 10.1143/JJAP.29.L27
[45]	Gupta G K, Garg A, Dixit A. Electrical and impedance spectroscopy analysis of Sol-gel derived spin coated Cu₂ZnSnS₄ solar cell. Journal of Applied Physics, 2018, 123(1), 0131, 01 doi: 10.1063/1.5002619
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Received: 05 September 2024 Revised: 22 January 2025 Online: Accepted Manuscript: 04 March 2025Uncorrected proof: 07 April 2025

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Bao Quy Le, Tuan Nguyen Van, Dat Tran Quang, Vi Le Dinh, Thin Pham Van, Nguyen Cuc Thi Kim. A simple and effective carrier lifetime characterization for semiconductor thin films[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/24090005 ****B Q Le, T N Van, D T Quang, V L Dinh, T P Van, and N C T Kim, A simple and effective carrier lifetime characterization for semiconductor thin films[J]. J. Semicond., 2025, 46(7), 072101 doi: 10.1088/1674-4926/24090005

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B Q Le, T N Van, D T Quang, V L Dinh, T P Van, and N C T Kim, A simple and effective carrier lifetime characterization for semiconductor thin films[J]. J. Semicond., 2025, 46(7), 072101 doi: 10.1088/1674-4926/24090005

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A simple and effective carrier lifetime characterization for semiconductor thin films

DOI: 10.1088/1674-4926/24090005

CSTR: 32376.14.1674-4926.24090005

1.
Precision Engineering & Smart measurements Lab, School of Mechanical Engineering, Hanoi University of Science and Technology, 1 Dai Co Viet, 100000 Hanoi, Vietnam
2.
Department of Physics, Le Quy Don Technical University, 100000 Hanoi, Viet Nam

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Bao Quy Le：Bao Le Quy received the B.E. (2008), M.E. (2010), degrees in mechanical engineering from Hanoi University of Science and Technology HUST, Vietnam. He is now a Ph.D student at HUST. He is interested in researching optical thin films and their applications in thermal imaging. He has experience working on interdisciplinary projects and wishes to contribute to the development of materials science and photonics
Tuan Nguyen Van received the Ph.D. degree from Université de Limoges et Institut Néel-France, in 2021. He is currently a senior lecturer and researcher at Le Quy Don Technical University, Hanoi, Vietnam. His current research interests include research and applications of multiphase high-performance magnets, spintronics, magnetic sensors, and semiconductor devices
Dat Tran Quang received his Ph.D. in 2018 from the Institute of Military Science and Technology, Vietnam. He is currently a Senior Lecturer and Head of the Laboratory at the Faculty of Technical Physics and Chemistry, Le Quy Don Technical University, Vietnam. His research focuses on advanced material synthesis and characterization using evaporation, sputtering, and CVD. He specializes in semiconductor optics and electronics, as well as materials for heavy metal ion adsorption and electromagnetic wave absorption
Vi Le Dinh graduated with a Bachelor's degree in Engineering in 2011 from Belarusian State University of Informatics and Radioelectronics. He then earned his Master's degree in 2017 and his Ph.D. in 2020 from the same institution. Currently, Le Dinh Vi is a lecturer at Le Quy Don Technical University in Hanoi, Vietnam. His research focuses on semiconductor materials, nanoporous materials, and electronic devices
Thin Pham Van obtained the Bachelor, Master, and Doctor degrees from VNU University of Science, in 1999, 2004, and 2015 respectively. He is now head of Department of Physics at Le Quy Don Technical University in Hanoi, Vietnam. He currently focuses on various topics including electronic devices, wide-range microwave absorbing materials, and infrared photodectors
Nguyen Cuc Thi Kim received the B.E. (2008), M.E. (2011), and Ph.D. (2019) degrees in mechanical engineering from Hanoi University of Science and Technology (HUST), Vietnam. She is currently a lecturer in the Department of Precision Mechanical and Optical Engineering, School of Mechanical Engineering of HUST. Her current interests include 3D accurate measurement, laser applications, semiconductor optics and devices, and medical instrument fabrication
Corresponding author: cuc.nguyenthikim@hust.edu.vn
Received Date: 2024-09-05
Revised Date: 2025-01-22

Available Online: 2025-03-04

Abstract

Abstract

Minority carrier lifetimes τ are a fundamental parameter in semiconductor devices, representing the average time it takes for excess minority carriers to recombine. This characteristic is crucial for understanding and optimizing the performance of semiconductor materials, as it directly influences charge carrier dynamics and overall device efficiency. This work presents a development of PbS thin film deposited by thermal evaporation, at which the PbS thin film was further employed for structural, optical properties, and τ. Especially, the PbS film is probed with an in-house setup for identifying the τ. The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency. The derived τ in the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence. Therefore, the in-house setup provides additional tools for identifying the τ values for semiconductor devices.
- semiconductors,
- minority carrier lifetime,
- open circuit voltage decay,
- PbS thin films

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