J. Semicond. > 2025, Volume 46 > Issue 2 > 021402
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SPECIAL ISSUE REVIEWS

Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications

Xiaohan Meng1, 3, Runsheng Gao1, 2, , Xiaojian Zhu1, 2, and Run-Wei Li1, 2

+ Author Affiliations

 Corresponding author: Runsheng Gao, rsgao@nimte.ac.cn; Xiaojian Zhu, zhuxj@nimte.ac.cn

DOI: 10.1088/1674-4926/24100025CSTR: 32376.14.1674-4926.24100025

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Abstract: The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computation, leading to high energy consumption, significant latency, and reduced operational efficiency. Neuromorphic computing, inspired by the architecture of the human brain, offers a promising alternative by integrating memory and computational functions, enabling parallel, high-speed, and energy-efficient information processing. Among various neuromorphic technologies, ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multidimensional control strategies. This review provides a comprehensive overview of recent progress in ion-modulation optoelectronic neuromorphic devices. It elucidates the key mechanisms underlying ionic modulation of light fields, including ion migration dynamics and capture and release of charge through ions. Furthermore, the synthesis of active materials and the properties of these devices are analyzed in detail. The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems, neuromorphic computing, and other bionic fields. Finally, the existing challenges and future directions for the development of optoelectronic neuromorphic devices are discussed, providing critical insights for advancing this promising field.

Key words: ion migration, optoelectronic modulation, optoelectronic device, neuromorphic computing, artificial vision system



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Fig. 1.  (Color online) Schematic illustration of ion-modulation optoelectronic neuromorphic devices in terms of mechanisms, materials and characteristics, and applications. Reproduced with permission from Ref. [39]. Copyright 2018, Wiley-VCH. Reproduced with permission from Ref. [40]. Copyright 2024, American Chemical Society. Reproduced with permission from Ref. [41]. Copyright 2023, Royal Society of Chemistry. Reproduced with permission from Ref. [42]. Copyright 2024, Wiley-VCH. Reproduced with permission from Ref. [43]. Copyright 2023, Springer Nature. Reproduced with permission from Ref. [44]. Copyright 2023, Elsevier. Reproduced with permission from Ref. [45]. Copyright 2023, The American Association for the Advancement of Science.

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Fig. 2.  (Color online) The behaviors and mechanisms of ion modulation by optical field in optoelectronic neuromorphic devices. (a) Illumination reduces the ionic activation energy of migration. Reproduced with permission from Ref. [39]. Copyright 2018, Wiley-VCH. (b) Phonon excitations caused by light absorption activates ionic diffusion. Reproduced with permission from Ref. [52]. Copyright 2023, Springer Nature. (c) Illumination facilitates Ni atoms to charge and discharge. Reproduced with permission from Ref. [40]. Copyright 2024, American Chemical Society. (d) Illumination promotes the oxygen vacancies to capture and release charges. Reproduced with permission from Ref. [53]. Copyright 2024, Wiley-VCH.

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Fig. 3.  (Color online) The characteristics of optoelectronic neuromorphic devices based on ion migration with different materials. (a) A schematic of optical switching in mixed-dimensionality nanoscale perovskite heterojunctions, the PPC characteristics under different materials, and the photocurrent for FAPbBr3 NC/SWCNT phototransistor. Reproduced with permission from Ref. [66]. Copyright 2021, The American Association for the Advancement of Science. (b) A schematic of tin oxide nanorod array with its cyclic stability and photoresponse characteristics. Reproduced with permission from Ref. [67]. Copyright 2023, American Chemical Society. (c) A schematic of the bionic self-driven retinomorphic eye with ionogel photosynaptic retina, along with its response to wavelength and intensity of light. Reproduced with permission from Ref. [68]. Copyright 2024, Springer Nature.

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Fig. 4.  (Color online) The characteristics of optoelectronic neuromorphic devices based on the capture and release of charges with different materials. (a) Schematic diagram of the Au/Cs2AgBiBr6/Au device and its current variation with light exposure time and wavelength, mimicking excitatory and inhibitory synaptic plasticity. Reproduced with permission from Ref. [41]. Copyright 2023, Royal Society of Chemistry. (b) Schematic diagram of the NiO/TiO2-based optoelectronic multistate memristor crossbar array and its cycling reliability and multi-level retention characteristics. Reproduced with permission from Ref. [40]. Copyright 2024, American Chemical Society. (c) Schematic diagram of the artificial optoelectronic synapse based on an ITO/Nb:SrTiO3 heterostructure and its photoresponse characteristics with the different illumination time, light wavelengths and number of pulsed light stimuli. Reproduced with permission from Ref. [84]. Copyright 2019, American Chemical Society.

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Fig. 5.  (Color online) Applications of optoelectronic neuromorphic devices in artificial vision systems. (a) Artificial vision system with signal preprocessing and motion recognition. Reproduced with permission from Ref. [91]. Copyright 2024, American Association for the Advancement of Science. (b) The POASPT arrays with the fuction of distinguishing and remembering colors. Reproduced with permission from Ref. [92]. Copyright 2021, Wiley-VCH. (c) Artificial vision system with facial recognition function. Reproduced with permission from Ref. [43]. Copyright 2023, Springer Nature. (d) All-optical bidirectional synapse device for digital recognition. Reproduced with permission from Ref. [93]. Copyright 2022, American Chemical Society. (e) Artificial vision system for complex image classification. Reproduced with permission from Ref. [94]. Copyright 2023, Wiley-VCH.

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Fig. 6.  (Color online) Applications of optoelectronic neuromorphic devices in neuromorphic computing and other biomimetic fields. (a) The Pavlovian classical conditioned reflex experiments realized by optoelectronic co-stimulation. Reproduced with permission from Ref. [44]. Copyright 2023, Elsevier. (b) The sensitization behavior simulated by all-oxide-based artificial photonic nociceptor. Reproduced with permission from Ref. [103]. Copyright 2019, Wiley-VCH. (c) The reconfiguring of the cognition functions by optogenetics simulated by an AOC memristive array. Reproduced with permission from Ref. [41]. Copyright 2023, Royal Society of Chemistry.

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      Xiaohan Meng, Runsheng Gao, Xiaojian Zhu, Run-Wei Li. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. Journal of Semiconductors, 2025, 46(2): 021402. doi: 10.1088/1674-4926/24100025 ****X H Meng, R S Gao, X J Zhu, and R W Li, Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. J. Semicond., 2025, 46(2), 021402 doi: 10.1088/1674-4926/24100025
      Citation:
      Xiaohan Meng, Runsheng Gao, Xiaojian Zhu, Run-Wei Li. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. Journal of Semiconductors, 2025, 46(2): 021402. doi: 10.1088/1674-4926/24100025 ****
      X H Meng, R S Gao, X J Zhu, and R W Li, Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. J. Semicond., 2025, 46(2), 021402 doi: 10.1088/1674-4926/24100025
      shu

      Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications

      DOI: 10.1088/1674-4926/24100025
      CSTR: 32376.14.1674-4926.24100025
      • 1.

        CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

      • 2.

        Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

      • 3.

        School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

      More Information
      • Xiaohan Meng got his BS degree from University of Science and Technology of China in 2022. Currently, he is a PhD student at ShanghaiTech University and under the supervision of Prof. Xiaojian Zhu in the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences. His work focuses on memristors and quantum conductance
      • Runsheng Gao is currently an Associate Professor at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences. He received his PhD degree from the University of Tsukuba in 2020, Japan. Then, he served as a postdoctoral researcher at the National Institute for Materials Science (NIMS) in Japan. His primary research interests revolve around investigating ion migration and storage mechanisms in diverse nanoionic materials, focusing on the fabrication of related devices and exploration of application scenarios
      • Xiaojian Zhu received his BS degree in physics from Soochow University, China, in 2009, and his PhD degree in materials science from the University of Chinese Academy of Sciences, China, in 2014. From 2015 to 2020, he worked as a post-doctoral research fellow at the Electrical Engineering and Computer Science Department, University of Michigan. He is currently a Full Professor at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences. His research interests include nanoionic materials and devices for neuromorphic computing
      • Corresponding author: rsgao@nimte.ac.cn; zhuxj@nimte.ac.cn
      • Received Date: 2024-10-16
      • Revised Date: 2024-11-18
        • Available Online: 2024-12-18

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