J. Semicond. > 2024, Volume 45 > Issue 12 > 120501

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PZT photonic materials and devices platform

Yujun Xie1, §, Peng Wang1, §, Hongyan Yu4, §, Chengyang Zhong1, 2, 3, Jie Peng1, 2, 3, Jungan Wang4, Chen Yang4, Yu Han5, Ang Li1, 2, 3, Zehao Guan1, 2, 3, Feng Qiu4, and Ming Li1, 2, 3,

+ Author Affiliations

 Corresponding author: Feng Qiu, A-photonics@outlook.com; Ming Li, ml@semi.ac.cn

DOI: 10.1088/1674-4926/24110020CSTR: 32376.14.1674-4926.24110020

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[1]
Abel S, Eltes F, Ortmann J E, et al. Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon. Nat Mater, 2019, 18(1), 42 doi: 10.1038/s41563-018-0208-0
[2]
Wen Y Y, Chen H S, Wu Z P, et al. Fabrication and photonic applications of Si-integrated LiNbO3 and BaTiO3 ferroelectric thin films. APL Mater, 2024, 12(2), 020601 doi: 10.1063/5.0192018
[3]
Wang C L, Li Z H, Riemensberger J, et al. Lithium tantalate photonic integrated circuits for volume manufacturing. Nature, 2024, 629, 784 doi: 10.1038/s41586-024-07369-1
[4]
Ban D S, Liu G L, Yu H Y, et al. Low driving voltage and low optical loss electro-optic modulators based on lead zirconate titanate thin film on silicon substrate. J Light Technol, 2022, 40(9), 2939 doi: 10.1109/JLT.2021.3138887
[5]
Alexander K, George J P, Verbist J, et al. Nanophotonic Pockels modulators on a silicon nitride platform. Nat Commun, 2018, 9(1), 3444 doi: 10.1038/s41467-018-05846-6
[6]
Kang T D, Xiao B, Avrutin V, et al. Large electro-optic effect in single-crystal Pb(Zr, Ti)O3 (001) measured by spectroscopic ellipsometry. J Appl Phys, 2008, 104(9), 093103 doi: 10.1063/1.3009655
[7]
Zhu M M, Du Z H, Jing L, et al. Optical and electro-optic anisotropy of epitaxial PZT thin films. Appl Phys Lett, 2015, 107(3), 031907 doi: 10.1063/1.4927404
[8]
Ban D S, Liu G L, Yu H Y, et al. High electro-optic coefficient lead zirconate titanate films toward low-power and compact modulators. Opt Mater Express, 2021, 11(6), 1733 doi: 10.1364/OME.426986
[9]
Yokoyama S, Mao J W, Uemura F, et al. 200 Gbit/s transmitter based on a spin-on ferroelectric waveguide modulator. 2023 Optical Fiber Communications Conference and Exhibition (OFC), 2023, 1 doi: 10.1364/OFC.2023.Tu3C.2
[10]
Feutmba G F, Da Silva L, Singh N, et al. High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators. Opt Mater Express, 2023, 13(7), 2120 doi: 10.1364/OME.494148
[11]
Liu G L, Yu H Y, Ban D S, et al. Highly efficient lead zirconate titanate ring modulator. APL Photonics, 2024, 9(6), 066111 doi: 10.1063/5.0193922
[12]
Alam M S, Li X Y, Jacques M, et al. Net 220 Gbps/λ IM/DD transmssion in O-band and C-band with silicon photonic traveling-wave MZM. J Light Technol, 2021, 39(13), 4270 doi: 10.1109/JLT.2021.3074096
[13]
He M B, Xu M Y, Ren Y X, et al. High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond. Nat Photonics, 2019, 13(5), 359 doi: 10.1038/s41566-019-0378-6
[14]
Xu M Y, Zhu Y T, Pittalà F, et al. Dual-polarization thin-film lithium niobate in-phase quadrature modulators for terabit-per-second transmission. Optica, 2022, 9(1), 61 doi: 10.1364/OPTICA.449691
[15]
Zhang Y G, Zhang H G, Zhang J W, et al. 240 Gb/s optical transmission based on an ultrafast silicon microring modulator. Photon Res, 2022, 10(4), 1127 doi: 10.1364/PRJ.441791
[16]
Tan Y, Niu S P, Billet M, et al. Micro-transfer printed thin film lithium niobate (TFLN)-on-silicon ring modulator. ACS Photonics, 2024, 11(5), 1920 doi: 10.1021/acsphotonics.3c01869
Fig. 1.  (Color online) (a) Fabricated 4-inch PZT wafer. Fabrication process (b), XRD results (c) and ellipsometric measurements (d) of the PZT films.

Fig. 2.  (Color online) High-resolution SEM images of PZT devices.

Fig. 3.  (Color online) Performance results for passive PZT devices in the C-band.

Fig. 4.  (Color online) Development from PZT optical platform to PZT-SOI optical platform.

Fig. 5.  (Color online) The future outlook for manufacturing technology and functional chips of PZT optical platform.

Table 1.   Summary of PZT devices performance.

Device Parameter C-band O-band
Rib waveguide Loss (dB/cm) 2.2 2.5
GC Loss (dB) 4 4.6
1 × 2MMI Loss (dB) 0.1 0.15
Imbalance (%) <5 <5
Crossing Loss (dB) 0.1 0.15
Crosstalk (dB) <−40 <−40
MZM Bandwidth (GHz) >70 /
Modulation efficiency (V·cm) 1.3 /
MRM Bandwidth (GHz) 53 /
Modulation efficiency (V·cm) 0.56 /
DownLoad: CSV

Table 2.   Comparison of PZT modulator performances with TFLN and SiPhs.

Device Materials VπL (V·cm) EO bandwidth (GHz) Ref
MZM SiPhs 1.9 46 [12]
MZM TFLN 2.2 >70 [13]
MZM TFLN 2.35 110 [14]
MZM PZT 1.3 >70 This work
MRM SiPhs 0.825 >50 [15]
MRM TFLN 7 17 [16]
MRM PZT 0.56 53 This work
DownLoad: CSV
[1]
Abel S, Eltes F, Ortmann J E, et al. Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon. Nat Mater, 2019, 18(1), 42 doi: 10.1038/s41563-018-0208-0
[2]
Wen Y Y, Chen H S, Wu Z P, et al. Fabrication and photonic applications of Si-integrated LiNbO3 and BaTiO3 ferroelectric thin films. APL Mater, 2024, 12(2), 020601 doi: 10.1063/5.0192018
[3]
Wang C L, Li Z H, Riemensberger J, et al. Lithium tantalate photonic integrated circuits for volume manufacturing. Nature, 2024, 629, 784 doi: 10.1038/s41586-024-07369-1
[4]
Ban D S, Liu G L, Yu H Y, et al. Low driving voltage and low optical loss electro-optic modulators based on lead zirconate titanate thin film on silicon substrate. J Light Technol, 2022, 40(9), 2939 doi: 10.1109/JLT.2021.3138887
[5]
Alexander K, George J P, Verbist J, et al. Nanophotonic Pockels modulators on a silicon nitride platform. Nat Commun, 2018, 9(1), 3444 doi: 10.1038/s41467-018-05846-6
[6]
Kang T D, Xiao B, Avrutin V, et al. Large electro-optic effect in single-crystal Pb(Zr, Ti)O3 (001) measured by spectroscopic ellipsometry. J Appl Phys, 2008, 104(9), 093103 doi: 10.1063/1.3009655
[7]
Zhu M M, Du Z H, Jing L, et al. Optical and electro-optic anisotropy of epitaxial PZT thin films. Appl Phys Lett, 2015, 107(3), 031907 doi: 10.1063/1.4927404
[8]
Ban D S, Liu G L, Yu H Y, et al. High electro-optic coefficient lead zirconate titanate films toward low-power and compact modulators. Opt Mater Express, 2021, 11(6), 1733 doi: 10.1364/OME.426986
[9]
Yokoyama S, Mao J W, Uemura F, et al. 200 Gbit/s transmitter based on a spin-on ferroelectric waveguide modulator. 2023 Optical Fiber Communications Conference and Exhibition (OFC), 2023, 1 doi: 10.1364/OFC.2023.Tu3C.2
[10]
Feutmba G F, Da Silva L, Singh N, et al. High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators. Opt Mater Express, 2023, 13(7), 2120 doi: 10.1364/OME.494148
[11]
Liu G L, Yu H Y, Ban D S, et al. Highly efficient lead zirconate titanate ring modulator. APL Photonics, 2024, 9(6), 066111 doi: 10.1063/5.0193922
[12]
Alam M S, Li X Y, Jacques M, et al. Net 220 Gbps/λ IM/DD transmssion in O-band and C-band with silicon photonic traveling-wave MZM. J Light Technol, 2021, 39(13), 4270 doi: 10.1109/JLT.2021.3074096
[13]
He M B, Xu M Y, Ren Y X, et al. High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond. Nat Photonics, 2019, 13(5), 359 doi: 10.1038/s41566-019-0378-6
[14]
Xu M Y, Zhu Y T, Pittalà F, et al. Dual-polarization thin-film lithium niobate in-phase quadrature modulators for terabit-per-second transmission. Optica, 2022, 9(1), 61 doi: 10.1364/OPTICA.449691
[15]
Zhang Y G, Zhang H G, Zhang J W, et al. 240 Gb/s optical transmission based on an ultrafast silicon microring modulator. Photon Res, 2022, 10(4), 1127 doi: 10.1364/PRJ.441791
[16]
Tan Y, Niu S P, Billet M, et al. Micro-transfer printed thin film lithium niobate (TFLN)-on-silicon ring modulator. ACS Photonics, 2024, 11(5), 1920 doi: 10.1021/acsphotonics.3c01869
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    History

    Received: 18 November 2024 Revised: 21 November 2024 Online: Accepted Manuscript: 21 November 2024Uncorrected proof: 25 November 2024Published: 15 December 2024

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      Yujun Xie, Peng Wang, Hongyan Yu, Chengyang Zhong, Jie Peng, Jungan Wang, Chen Yang, Yu Han, Ang Li, Zehao Guan, Feng Qiu, Ming Li. PZT photonic materials and devices platform[J]. Journal of Semiconductors, 2024, 45(12): 120501. doi: 10.1088/1674-4926/24110020 ****Y J Xie, P Wang, H Y Yu, C Y Zhong, J Peng, J G Wang, C Yang, Y Han, A Li, Z H Guan, F Qiu, and M Li, PZT photonic materials and devices platform[J]. J. Semicond., 2024, 45(12), 120501 doi: 10.1088/1674-4926/24110020
      Citation:
      Yujun Xie, Peng Wang, Hongyan Yu, Chengyang Zhong, Jie Peng, Jungan Wang, Chen Yang, Yu Han, Ang Li, Zehao Guan, Feng Qiu, Ming Li. PZT photonic materials and devices platform[J]. Journal of Semiconductors, 2024, 45(12): 120501. doi: 10.1088/1674-4926/24110020 ****
      Y J Xie, P Wang, H Y Yu, C Y Zhong, J Peng, J G Wang, C Yang, Y Han, A Li, Z H Guan, F Qiu, and M Li, PZT photonic materials and devices platform[J]. J. Semicond., 2024, 45(12), 120501 doi: 10.1088/1674-4926/24110020

      PZT photonic materials and devices platform

      DOI: 10.1088/1674-4926/24110020
      CSTR: 32376.14.1674-4926.24110020
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      • Yujun Xie received the B.S. degree in electrical engineering and automation from Fudan University, Shanghai, China, in 2016, and the Ph.D. degree in physical electronics from Fudan University in 2021. He currently holds a position as an Assistant Researcher with the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. His research interests include high-speed optoelectronic materials and devices
      • Peng Wang received the Ph.D. degree in optoelectronics and nanostructure science from the University of Shizuoka, Hamamatsu, Japan, in 2017. He currently holds a post-doctoral position with the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. His current research interests include high-speed optoelectronic devices and materials
      • Hongyan Yu received the B.S. degree in material physics from Harbin University of Science and Technology, Harbin, Heilongjiang, China, in 2015, and received M.S. degree in optical engineering from Beijing University of Technology, Beijing, China, in 2019, and received Ph.D. degree in optical engineering from Zhejiang University, Hangzhou, Zhejiang, China, in 2023. He currently holds a post-doctoral position with the Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, China. His research interest includes high-speed electro-optic modulators
      • Feng Qiu received the Ph.D. degree from Kochi University of Technology, Japan, in 2011. From 2011 to 2022, he was a Research Scholar and then Assistant Professor with the Institute for Materials Chemistry and Engineering, Kyushu University. In 2022, he joined the Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, where he is now a full professor on optical and electrical materials/devices. His research aims to realize highly efficient optoelectronic devices based on novel and exciting thin film materials
      • Ming Li received the Ph.D. degree in electrical and electronics engineering from the University of Shizuoka, Hamamatsu, Japan, in 2009. In 2009, he was with the Microwave Photonics Research Laboratory, School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, Canada, as a Postdoctoral Research Fellow. In 2011, he was with the Ultrafast Optical Processing Group under the supervision of INRS-EMT, Montreal, QC, Canada, as a Postdoctoral Research Fellow. In 2013, he was with the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, as a Full Professor under the support of Thousand Youth Talents Program. He has authored more than 140 high-impact journal papers. His research interests include integrated microwave photonics and its applications, ultrafast optical signal processing, and high-speed real-time optical measurement and sensing
      • Corresponding author: A-photonics@outlook.comml@semi.ac.cn
      • Received Date: 2024-11-18
      • Revised Date: 2024-11-21
      • Available Online: 2024-11-21

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