Green perovskite CsPbBr<sub>3</sub> light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

Viktoriia Mastalieva; Anastasiya Yakubova; Maria Baeva; Vladimir Neplokh; Dmitry M. Mitin; Vladimir Fedorov; Alexander Goltaev; Alexey Mozharov; Fedor Kochetkov; Andrei S. Toikka; Ramazan Kenesbay; Ekaterina Vyacheslavova; Alexander Vorobyev; Kristina Novikova; Dmitry Krasnikov; Jianjun Tian; Albert G. Nasibulin; Alexander Gudovskikh; Sergey Makarov; Ivan Mukhin

doi:10.1088/1674-4926/24120010

J. Semicond. > In Press

ARTICLES

Green perovskite CsPbBr₃ light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

Viktoriia Mastalieva¹, Anastasiya Yakubova^1,, Maria Baeva¹, Vladimir Neplokh^{1, 2, 3}, Dmitry M. Mitin¹, Vladimir Fedorov^{1, 2}, Alexander Goltaev¹, Alexey Mozharov¹, Fedor Kochetkov^{1, 2}, Andrei S. Toikka^{1, 4}, Ramazan Kenesbay¹, Ekaterina Vyacheslavova¹, Alexander Vorobyev^{1, 2}, Kristina Novikova^{1, 2}, Dmitry Krasnikov⁵, Jianjun Tian⁶, Albert G. Nasibulin⁵, Alexander Gudovskikh¹, Sergey Makarov^{4, 7} and Ivan Mukhin^{1, 2}

+ Author Affiliations

1. Alferov University, Khlopina 8/3, 194021, St. Petersburg, Russia
2. Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251, St. Petersburg, Russia
3. Institute of Chemistry, St Petersburg State University, 7/9 Universitetskaya Emb., 199034, St. Petersburg, Russia
4. ITMO University, Kronverksky Pr. 49, bldg. A, 197101, St. Petersburg, Russia
5. Kemerovo State University, Krasnaya Str. 6, Kemerovo, 650000, Russia
6. University of Science and Technology Beijing, Beijing 100083, China
7. Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao 266000, China

Author Bio:

Viktoriia Mastalieva Victoriia Mastalieva was trained from 2020 to 2024 in the scientific speciality "Semiconductor Physics" at the Alferov Federal State Institution of the Russian Academy of Sciences in St. Petersburg (Renewable Energy Laboratory). Scientific supervisor is a specialist in flexible electronics Neplokh V. V. Now the focus of scientific interests includes nonlinear silicon photonics with high compatibility with CMOS technology. Nonlinear effects in silicon nanowires (NWs) are widely studied due to high sensitivity to structural changes, cheapness of fabrication and efficient tunability of photonic properties.

Anastasiya Yakubova Yakubova Anastasiya got her bachelor's degree in 2021 from the Saint Petersburg State Chemical and Pharmaceutical University and her master's degree in 2023 in Alferov University, Saint Petersburg. Now she is postgraduate student at Alferov University under supervision of Dr. Fedor Kochetkov. Her research focuses on flexible electronics, based on perovskite materials.

Corresponding author: Anastasiya Yakubova, yakubova.nastya@bk.ru

DOI: 10.1088/1674-4926/24120010CSTR: 32376.14.1674-4926.24120010

Abstract: The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry. In this work we present an approach to fabricating a flexible green perovskite light-emitting electrochemical cell (PeLEC) with a CsPbBr₃ perovskite active layer using a highly-ordered silicon nanowire (Si NW) array as a distributed electrode integrated within a thin polydimethylsiloxane film (PDMS). Numerical simulations reveal that Si NWs-based distributed electrode aids the improvement of carrier injection into the perovskite layer with an increased thickness and, therefore, the enhancement of light-emitting performance. The X-ray diffraction study shows that the perovskite layer synthesized on the PDMS membrane with Si NWs has a similar crystal structure to the ones synthesized on planar Si wafers. We perform a comparative analysis of the light-emitting devices’ properties fabricated on rigid silicon substrates and flexible Si NW-based membranes released from substrates. Due to possible potential barriers in a flexible PeLEC between the bottom electrode (made of a network of single-walled carbon nanotube film) and Si NWs, the electroluminescence performance and I ̶ V properties of flexible devices deteriorated compared to rigid devices. The developed PeLECs pave the way for further development of inorganic flexible uniformly light-emitting devices with improved properties.

Key words: silicon nanowires, perovskite, CsPbBr₃thin film, silicon, PeLEC

References

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Fig. 1. (Color online) (a) Schematic presentation of the conventional design of a flexible planar perovskite light-emitting device (on the left) and flexible perovskite device with a distributed Si NWs electrode (on the right). (b) Fabrication workflow of a flexible PeLEC with a distributed Si NW-based electrode. (c) Photo of the bent PeLEC membrane with a distributed Si NW-based electrode; scale bar is 1 cm.

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Fig. 2. Isometric SEM images of (a) an etched Si NW array; (b) a Si NWs array after PDMS coating; (c) the revealed top parts of Si NWs in the partially etched PDMS membrane. Inset in (a) shows a cross-section view SEM image of an as-fabricated Si NW array. The scale bars for all images are 2 µm.

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Fig. 3. (Color online) (a) Schematic view of the considered semiconductor system. (b) The calculated system band diagram at the Si NWs/CsPbBr₃ interface (transverse coordinate). (c) The system’s calculated current density and radiative recombination quantum efficiency dependencies over the applied voltage (for the fixed H_emb = 500 nm, D_NW = 100 nm, L = 1000 нм, P = 0.2 μm⁻²). Insert shows the distribution of radiative recombination rate in the cross-section of the PeLEC structure. The calculated maps of quantum efficiency on (d) NW surface density and NW diameter (for the fixed H_emb = 500 nm and L = 1000 nm) and (e) perovskite thickness and NW height embedded into the active perovskite layer (for the fixed D_NW = 75 nm and P = 0.2 μm⁻²).

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Fig. 4. (Color online) (a) Cross-sectional SEM images of perovskite layers, spin-coated at 600 and 1200 rpm on Si NWs membranes (presented in artificial colors for clarity); the insets show the corresponding top-view PL images. (b) PL spectra of CsPbBr₃ layers obtained with different coating speeds. (c) Isometric SEM images of CsPbBr₃ layers spin-coated on Si NWs membranes at 600 rpm and annealed at 60 and 200 °C; the insets show the corresponding top-view PL images. (d) PL spectra of CsPbBr₃ layers obtained with different temperatures of annealing. (e) XRD patterns for a series of CsPbBr₃ perovskite films spin-coated on Si NW membranes and planar Si substrate. The calculated positions of the Bragg reflections related to the CsPbBr₃ (COD CIF file ID: 4510745)^[54] and Cs₄PbBr₆ (COD CIF file ID: 4002857)^[55] phases are shown by black and green vertical marks, correspondingly.

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Fig. 5. (Color online) (a) Сross-sectional SEM image of PeLEC-on-Si device (in artificial colors for clarity). Photo of (b) PeLEC-on-Si and (c) flexible PeLEC during EL measurements (acquired at 5 and 7.3 V applied voltage, respectively). (d) Luminance−voltage (red curve) and current density−voltage (black curve) dependencies for PeLEC-on-Si device, (e) EL spectra of PeLEC-on-Si and flexible PeLEC devices. (f) PeLEC-on-Si and flexible PeLEC I−V curves comparison.

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Received: 06 December 2024 Revised: 26 January 2025 Online: Uncorrected proof: 08 April 2025

Article Navigation > Journal of Semiconductors > 2025 > Uncorrected proof

Viktoriia Mastalieva, Anastasiya Yakubova, Maria Baeva, Vladimir Neplokh, Dmitry M. Mitin, Vladimir Fedorov, Alexander Goltaev, Alexey Mozharov, Fedor Kochetkov, Andrei S. Toikka, Ramazan Kenesbay, Ekaterina Vyacheslavova, Alexander Vorobyev, Kristina Novikova, Dmitry Krasnikov, Jianjun Tian, Albert G. Nasibulin, Alexander Gudovskikh, Sergey Makarov, Ivan Mukhin. Green perovskite CsPbBr3 light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/24120010 ****V Mastalieva, A Yakubova, M Baeva, V Neplokh, D M Mitin, V Fedorov, A Goltaev, A Mozharov, F Kochetkov, A S Toikka, R Kenesbay, E Vyacheslavova, A Vorobyev, K Novikova, D Krasnikov, J J Tian, A G Nasibulin, A Gudovskikh, S Makarov, and I Mukhin, Green perovskite CsPbBr3 light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications[J]. J. Semicond., 2025, 46(7), 072801 doi: 10.1088/1674-4926/24120010

Citation:

V Mastalieva, A Yakubova, M Baeva, V Neplokh, D M Mitin, V Fedorov, A Goltaev, A Mozharov, F Kochetkov, A S Toikka, R Kenesbay, E Vyacheslavova, A Vorobyev, K Novikova, D Krasnikov, J J Tian, A G Nasibulin, A Gudovskikh, S Makarov, and I Mukhin, Green perovskite CsPbBr₃ light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications[J]. J. Semicond., 2025, 46(7), 072801 doi: 10.1088/1674-4926/24120010

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Green perovskite CsPbBr₃ light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

DOI: 10.1088/1674-4926/24120010

CSTR: 32376.14.1674-4926.24120010

1.
Alferov University, Khlopina 8/3, 194021, St. Petersburg, Russia
2.
Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251, St. Petersburg, Russia
3.
Institute of Chemistry, St Petersburg State University, 7/9 Universitetskaya Emb., 199034, St. Petersburg, Russia
4.
ITMO University, Kronverksky Pr. 49, bldg. A, 197101, St. Petersburg, Russia
5.
Kemerovo State University, Krasnaya Str. 6, Kemerovo, 650000, Russia
6.
University of Science and Technology Beijing, Beijing 100083, China
7.
Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao 266000, China

More Information

Viktoriia Mastalieva：Victoriia Mastalieva was trained from 2020 to 2024 in the scientific speciality "Semiconductor Physics" at the Alferov Federal State Institution of the Russian Academy of Sciences in St. Petersburg (Renewable Energy Laboratory). Scientific supervisor is a specialist in flexible electronics Neplokh V. V. Now the focus of scientific interests includes nonlinear silicon photonics with high compatibility with CMOS technology. Nonlinear effects in silicon nanowires (NWs) are widely studied due to high sensitivity to structural changes, cheapness of fabrication and efficient tunability of photonic properties
Anastasiya Yakubova：Yakubova Anastasiya got her bachelor's degree in 2021 from the Saint Petersburg State Chemical and Pharmaceutical University and her master's degree in 2023 in Alferov University, Saint Petersburg. Now she is postgraduate student at Alferov University under supervision of Dr. Fedor Kochetkov. Her research focuses on flexible electronics, based on perovskite materials
Corresponding author: yakubova.nastya@bk.ru
Received Date: 2024-12-06
Revised Date: 2025-01-26

Available Online: 2025-04-08

Abstract

Abstract

The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry. In this work we present an approach to fabricating a flexible green perovskite light-emitting electrochemical cell (PeLEC) with a CsPbBr₃ perovskite active layer using a highly-ordered silicon nanowire (Si NW) array as a distributed electrode integrated within a thin polydimethylsiloxane film (PDMS). Numerical simulations reveal that Si NWs-based distributed electrode aids the improvement of carrier injection into the perovskite layer with an increased thickness and, therefore, the enhancement of light-emitting performance. The X-ray diffraction study shows that the perovskite layer synthesized on the PDMS membrane with Si NWs has a similar crystal structure to the ones synthesized on planar Si wafers. We perform a comparative analysis of the light-emitting devices’ properties fabricated on rigid silicon substrates and flexible Si NW-based membranes released from substrates. Due to possible potential barriers in a flexible PeLEC between the bottom electrode (made of a network of single-walled carbon nanotube film) and Si NWs, the electroluminescence performance and I ̶ V properties of flexible devices deteriorated compared to rigid devices. The developed PeLECs pave the way for further development of inorganic flexible uniformly light-emitting devices with improved properties.
- silicon nanowires,
- perovskite,
- CsPbBr₃thin film,
- silicon,
- PeLEC

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