J. Semicond. > 2025, Volume 46 > Issue 2 > 021405
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SPECIAL ISSUE REVIEWS

Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration

Pu Guo, Junyao Zhang and Jia Huang

+ Author Affiliations

 Corresponding author: Jia Huang, huangjia@tongji.edu.cn

DOI: 10.1088/1674-4926/24120017CSTR: 32376.14.1674-4926.24120017

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Abstract: The rapid growth of artificial intelligence has accelerated data generation, which increasingly exposes the limitations faced by traditional computational architectures, particularly in terms of energy consumption and data latency. In contrast, data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage. Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric computing paradigm owing to their superiority of flexibility, low cost, and large-area fabrication. However, sophisticated functions including vector-matrix multiplication that a single device can achieve are limited. Thus, the fabrication and utilization of organic optoelectronic synaptic transistor arrays (OOSTAs) are imperative. Here, we summarize the recent advances in OOSTAs. Various strategies for manufacturing OOSTAs are introduced, including coating and casting, physical vapor deposition, printing, and photolithography. Furthermore, innovative applications of the OOSTA system integration are discussed, including neuromorphic visual systems and neuromorphic computing systems. At last, challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.

Key words: organic transistor arrays, optoelectronic synaptic transistors, neuromorphic systems, system integration



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Fig. 1.  (Color online) Schematic diagrams of fabrication strategies of OOSTAs.

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Fig. 2.  (Color online) Spin coating for the fabrication of OOSTAs. (a) The photograph and the transfer characteristic curves of the 10 × 10 OOSTAs on a 2-inch wafer reproduced with permission[32]. Copyright 2023, Wiley-VCH. (b) The schematic diagram of the flexible OOSTAs and the images of OOSTAs transferred to multiple substrates reproduced with permission[33]. Copyright 2023, American Chemical Society. (c) The schematic diagram and the optical image of the intrinsic stretchable OOSTAs reproduced with permission[34]. Copyright 2022, Royal Society of Chemistry. (d) The schematic diagram of 9 × 8 transistor array and the optical image. Revised illustration reproduced with permission[35]. Copyright 2020, Wiley-VCH.

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Fig. 3.  (Color online) Dip coating for the fabrication of OOSTAs. (a) Schematic illustration of the wafer-scale growth of DPA crystal arrays and (b) the microstructure of the crystal array with reproduced permission[38]. Copyright 2019, Elsevier. (c) Schematic illustration of the dip coating process for patterning C8-BTBT crystal arrays. (d) Colored SEM images of a typical C8-BTBT single crystal arrays-based organic field transistor reproduced with permission[39]. Copyright 2020, Elsevier. (e) Polarized optical microscope images of perovskite nanoparticles on the surfaces of the C8-BTBT single-crystal array and (f) the schematic diagram of the transistor arrays reproduced with permission[40]. Copyright 2019, American Chemical Society.

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Fig. 4.  (Color online) Blade coating and drop casting for the fabrication of OOSTAs. (a) The schematic diagram of blade coating of wafer-scale ultrathin OSC crystalline film and the optical image of the wafer-scale ultrathin Dif-TES-ADT crystalline film reproduced with permission[42]. Copyright 2020, Royal Society of Chemistry. (b) The schematic diagram of blade-coating technique with a programmed blade coating speed to prepare for TIPS-PEN crystal patterns and the optical image of the transistor arrays with TIPS-PEN crystal patterns reproduced with permission[43]. Copyright 2019, American Chemical Society. (c) The process diagram of the fully printed process and (d) the optical image of the 8 × 8 OOSTAs array reproduced with permission[44]. Copyright 2022, Wiley-VCH. (e) Schematic illustration of three deposition regimes during the blade coating stretchable film and (f) the diagram and the optical image of the stretchable transistor arrays reproduced with permission[45]. Copyright 2024, American Chemical Society. The drop casting for the OOSTAs based on small molecules including (g) the schematic diagram of the OOSTAs based on the prepared semiconductor arrays prepared by drop coating reproduced with permission[47]. Copyright 2023, Royal Society of Chemistry. (h) The schematic diagram of the CsPbBr3/TIPS-pentacene composite synaptic array. (i) The AFM image and the SEM image of the CsPbBr3/TIPS-pentacene crystal array reproduced with permission[46]. Copyright 2024, Elsevier.

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Fig. 5.  (Color online) Physical vapor deposition for the fabrication of OOSTAs. (a) The schematic diagram of 10 × 10 Ru-complex 1/BPE-PTCDI/SU-8 OOSTAs fabricated on a flexible, transparent reproduced with permission[51]. Copyright 2016, American Chemical Society. (b) The flexible OOSTAs based on the unseparated functional film reproduced with permission[49]. Copyright 2018, American Chemical Society. (c) Schematic diagram of transistor arrays and molecular structures of PVDF-TrFE and pentacene reproduced with permission[53]. Copyright 2019, American Chemical Society. (d) The image of TIPS-pentacene transistor array reproduced with permission[52]. Copyright 2024, American Chemical Society. (e) The 6 × 8 patterned device OOSTAs reproduced with permission[54]. Copyright 2023, Springer Nature. (f) The Schematic of layers in a unit of OOSTA and the optical image of the OOSTAs reproduced with permission[55]. Copyright 2023, Wiley-VCH.

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Fig. 6.  (Color online) Printing for the fabrication of OOSTAs. (a) A schematic illustration of the method of screen printing and optical image of the 8 × 8 transistor array on 3 × 3 cm2 Si/SiO2 substrate using C8-BTBT: PMMA. (b) The consistency of saturation mobility of 64 transistors from 8 × 8 array reproduced with permission[60]. Copyright 2019, Wiley-VCH. (c) Schematic illustration of the key fabrication procedures for OOSTAs with screen printing technology reproduced with permission[61]. Copyright 2019, American Chemical Society. (d) Top view of 56 pairs of 3D-transistor inverters fabricated by inkjet printing on a substrate and the optical images of a single 3D-transistor inverter reproduced with permission[62]. Copyright 2016, American Chemical Society. (e) The schematic diagram of vertical OOSTAs and the optical image of the vertical OOSTAs reproduced with permission[63]. Copyright 2018, American Chemical Society. (f) optical image of a 5 × 6 ferroelectric OOSTAs reproduced with permission[64]. Copyright 2018, Wiley-VCH.

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Fig. 7.  (Color online) Photolithography for the fabrication of OOSTAs. (a) Schematic representation of a semiconducting polymer in its cross-linked state formed by 4Bx and (b) the schematic diagram of all-photopatterned transistor arrays reproduced with permission[66]. Copyright 2020, Springer Nature. (c) The schematic diagram and optical image of the CsPbBr3 QDs/DPPDTT OOSTAs reproduced with permission[69]. Copyright 2024, Wiley-VCH. (d) The schematic diagram showing the photocrosslinking of the semiconductor photoresist and the corresponding transistor arrays reproduced with permission[74]. Copyright 2021, the American Association for the Advancement of Science. (e) The photographs of ultralarge-scale integration level imaging chip on a SiO2/Si wafer reproduced with permission[76]. Copyright 2024, Springer Nature.

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Fig. 8.  (Color online) Neuromorphic visual systems (a) learning and forgetting process of the OOSTAs reproduced with permission[49]. Copyright 2018, American Chemical Society. (b) Image recognition and reinforcement learning reproduced with permission[44]. Copyright 2022, Wiley-VCH. (c) A schematic diagram showing the image of the letter "N" of the stretchable OOSTAs. reproduced with permission[34]. Copyright 2022, Royal Society of Chemistry. (d) A schematic diagram showing the focused image of the letter "X" onto the stretchable OOSTAs reproduced with permission[55]. Copyright 2022, Wiley-VCH. (e) The color filtering process based on the OOSTAs reproduced with permission[48]. Copyright 2024, Elsevier. (f) The motion detection based on the OOSTAs reproduced with permission[69]. Copyright 2024, Wiley-VCH.

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Fig. 9.  (Color online) Neuromorphic computing based on OOSTAs. (a) LTP−LTD cycles of the synaptic transistors reproduced with permission[79]. Copyright 2022, Elsevier. (b) Schematic diagram of the single-layer perceptron network reproduced with permission[80]. Copyright 2023, American Chemical Society. (c) LTP/LTD curves of the flexible OOSTAs and (d) the schematic diagram of the constructed single-hidden-layer ANN with the image preprocessing reproduced with permission[48]. Copyright 2024, Elsevier.

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Table 1.   Summary of the currently reported OOSTAs.

Functional materials Fabrication strategies of OOSTAs Configuration of OOSTAs Reference
DPPDTT/CsPbBr3 quantum dots Spin coating 6 × 6 31
DPPDTT/Cl-HABI Spin coating 10 × 10 32
P3HT-b-PPI(5F) Spin coating 4 × 4 33
IDTBT Spin coating 4 × 4 34
TIPS-pentacene Spin coating 9 × 8 35
2,6-diphenylanthracene (DPA) Dip coating 7 × 9 38
C8-BTBT Dip coating 13 × 13 39
CH3NH3PbI/C8-BTBT Dip coating 10 × 10 40
Dif-TES-ADT Blade coating 5 × 8 42
TES-ADT/PS Blade coating 8 × 8 44
PDBT-co-TT/SEBS Blade coating 10 × 10 45
TIPS-PEN/CsPbBr3/PVP Drop casting 4 × 4 46
TIPS-PEN Drop casting 8 × 8 47
TIPS-PEN PVD 4 × 4 52
Pentacene PVD NA 53
2-hexylthieno[4,5-b][1] benzothieno[3,2-b][1] benzothiophene PVD 8 × 6 54
Pentacene PVD 12 × 12 55
C8-BTBT/PMMA Screen printing 8 × 8 60
PDVT-8 Inkjet printing NA 63
PVDT-10 Inkjet printing 5 × 6 64
CsPbBr3 quantum dots/DPPDTT Photolithography up to 6500 units cm−2 69
Poly(tetrathienoacene–diketopyrrolopyrrole)/CsPbBr3 Photolithography up to 3.1 × 106 units cm−2 76
CsPbBr3 quantum dots/DPPDTT Photolithography up to 6500 units cm−2 48
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    Received: 14 December 2024 Revised: 04 January 2025 Online: Accepted Manuscript: 15 January 2025Uncorrected proof: 17 January 2025Published: 15 February 2025

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      Article Navigation >  Journal of Semiconductors  > 2025  >  46(2): 021405
      Pu Guo, Junyao Zhang, Jia Huang. Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration[J]. Journal of Semiconductors, 2025, 46(2): 021405. doi: 10.1088/1674-4926/24120017 ****P Guo, J Y Zhang, and J Huang, Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration[J]. J. Semicond., 2025, 46(2), 021405 doi: 10.1088/1674-4926/24120017
      Citation:
      Pu Guo, Junyao Zhang, Jia Huang. Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration[J]. Journal of Semiconductors, 2025, 46(2): 021405. doi: 10.1088/1674-4926/24120017 ****
      P Guo, J Y Zhang, and J Huang, Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration[J]. J. Semicond., 2025, 46(2), 021405 doi: 10.1088/1674-4926/24120017
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      Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration

      DOI: 10.1088/1674-4926/24120017
      CSTR: 32376.14.1674-4926.24120017

      • School of Materials Science and Engineering, Tongji University, Shanghai 201804, China

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      • Pu Guo got his B.Sc. in materials science and engineering at Northeast Forestry University in 2020. Now he is a PhD student at Tongji University under the supervision of Prof. Jia Huang. His research focuses on organic neuromorphic device arrays
      • Jia Huang is a professor of materials science and engineering at Tongji University in Shanghai, China. He received his B.Sc. in materials science and engineering at the University of Science and Technology of China, his M.Sc. in applied science at the College of William & Mary, USA, and his Ph.D. in materials science and engineering at Johns Hopkins University, USA. Currently, Prof. Jia Huang’s research focuses on organic semiconductors, neuromorphic devices, flexible electronics, chemical and biological sensors, and thin-film transistors
      • Corresponding author: huangjia@tongji.edu.cn
      • Received Date: 2024-12-14
      • Revised Date: 2025-01-04
        • Available Online: 2025-01-15

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