Fig. 1.
(Color online) Post-anneal Rs distribution of GeTe sputtered under different pressure: (a) 0.4 Pa; (b) 0.67 Pa; (c) 0.93 Pa; (d) 1.0 Pa.
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| Citation: |
Shihang Liu, Hanxiang Jia, Shuangzan Lu, Changyu Hu, Jun Liu. Magnetron sputter and phase change optimization of wafer-level GeTe films for RF switch[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/24120033
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S H Liu, H X Jia, S Z Lu, C Y Hu, and J Liu, Magnetron sputter and phase change optimization of wafer-level GeTe films for RF switch[J]. J. Semicond., 2025, 46(7), 072702 doi: 10.1088/1674-4926/24120033
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Magnetron sputter and phase change optimization of wafer-level GeTe films for RF switch
DOI: 10.1088/1674-4926/24120033
CSTR: 32376.14.1674-4926.24120033
More Information-
Shihang Liu received his master's degree in June 2022 from Wuhan University of Technology. Then he joined JFS Laboratory in July 2022 as a thin film process engineer. His main research interests focus on the development of piezoelectric thin film processes -
Hanxiang Jia got his PhD degree from University of Chinese Academy of Sciences in 2022. Then he joined JFS Laboratory in July 2022 as a thin film technology development senior engineer. His main research interest focuses on functional films including piezoelectric films, metal−semi contact, and phase change alloys -
Jun Liu received his Ph.D. in electrical and electronic engineering from the City University of Hong Kong (2014). Dr. Liu join the Jiufengshan Laboratory (JFS) as director of process center and is now a professor of JFS. He mainly worked on compound semiconductor modeling, processing, and characterization - Corresponding author: jiahanxiang@jfslab.com.cn; liujun@jfslab.com.cn
- Revised Date: 2025-01-22 Available Online: 2025-02-25
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Abstract
With the rapid advancement of 5G communication technology, increasingly stringent demands are placed on the performance and functionality of phase change switches. Given that RF and microwave signals exhibit characteristics of high frequency, high speed, and high precision, it is imperative for phase change switches to possess fast, accurate, and reliable switching capabilities. Moreover, wafer-level compositional homogeneity and resistivity uniformity during semiconductor manufacturing are crucial for ensuring the yield and reliability of RF switches. By controlling magnetron sputter of GeTe through from four key parameters (power, Ar flow, pressure, and post-annealing) and incorporating elemental proportional compensation in the target, we achieved effective modulation over GeTe uniformity. Finally, we successfully demonstrated the process integration of GeTe phase-change RF switches on 6-inch scaled wafers.-
Keywords:
- GeTe,
- magnetron sputter,
- phase change,
- in-wafer uniformity,
- RF switch
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References
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Proportional views
§Shihang Liu and Hanxiang Jia contribute equally to this work.
