J. Semicond. > 2025, Volume 46 > Issue 2 > 020101

EDITORIAL

Preface to Special Issue on Optoelectronic Neuromorphic Devices

Zhenyi Ni1, 2, , Zhongqiang Wang3, , Jia Huang4, and Xiaodong Pi1, 5,

+ Author Affiliations

 Corresponding author: Zhenyi Ni, zyni@zju.edu.cn; Zhongqiang Wang, wangzq752@nenu.edu.cn; Jia Huang, huangjia@tongji.edu.cn; Xiaodong Pi, xdpi@zju.edu.cn

DOI: 10.1088/1674-4926/25020802CSTR: 32376.14.1674-4926.25020802

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[1]
Bi J M, Li Y R, Lu R, et al. Electrolyte-gated optoelectronic transistors for neuromorphic applications. J Semicond, 2025, 46(2), 021401 doi: 10.1088/1674-4926/24090042
[2]
Meng X H, Gao R S, Zhu X J, et al. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications. J Semicond, 2025, 46(2), 021402 doi: 10.1088/1674-4926/24100025
[3]
Wang Y R, Liu S S, Zhang H X, et al. Adaptive optoelectronic transistor forintelligent vision system. J Semicond, 2025, 46(2), 021404 doi: 10.1088/1674-4926/24100042
[4]
Ye B Y, Liu X, Wu C, et al. Synaptic devices based on silicon carbide for neuromorphic computing. J Semicond, 2025, 46(2), 021403 doi: 10.1088/1674-4926/24100020
[5]
Guo P, Zhang J Y, Huang J. Recent progress in organic optoelectronic synaptic transistor arrays: fabricationstrategies and innovative applications of system integration. J Semicond, 2025, 46(2), 021405 doi: 10.1088/1674-4926/24120017
[6]
Yang L B, Gu X S, Zhou M, et al. Deep-UV-photo-excited synaptic Ga2O3 nano-device withlow-energy consumption for neuromorphic computing. J Semicond, 2025, 46(2), 022401 doi: 10.1088/1674-4926/24050037
[7]
Zhong B W, Qin X K, Li Z X, et al. Electropolymerized dopamine-based memristorsusing threshold switching behaviors for artificial current-activated spiking neurons. J Semicond, 2025, 46(2), 022402 doi: 10.1088/1674-4926/24070007
[8]
Pu X R, Shu F, Wang Q F, et al. Visual synapse based on reconfigurable organic photovoltaic cell. J Semicond, 2025, 46(2), 022403 doi: 10.1088/1674-4926/24080018
[9]
Zhan T, Sun J W, Lin J, et al. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing. J Semicond, 2025, 46(2), 022404 doi: 10.1088/1674-4926/24080049
[10]
Jiang J Y, Ding B X, Li S Y, et al. All-opticalnonlinear activation functions realized on phase-change photonic integrated circuits with microheaters. J Semicond, 2025, 46(2), 022405 doi: 10.1088/1674-4926/24090045
[11]
Ma X Q, Zhang W B, Zheng Q, et al. Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access. J Semicond, 2025, 46(2), 022406 doi: 10.1088/1674-4926/24090051
[12]
Tian Q L, Xun K, Li Z Z, et al. Optoelectronic memristor based on a-C: Te film for muti-mode reservoir computing. J Semicond, 2025, 46(2), 022407 doi: 10.1088/1674-4926/24100008
[1]
Bi J M, Li Y R, Lu R, et al. Electrolyte-gated optoelectronic transistors for neuromorphic applications. J Semicond, 2025, 46(2), 021401 doi: 10.1088/1674-4926/24090042
[2]
Meng X H, Gao R S, Zhu X J, et al. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications. J Semicond, 2025, 46(2), 021402 doi: 10.1088/1674-4926/24100025
[3]
Wang Y R, Liu S S, Zhang H X, et al. Adaptive optoelectronic transistor forintelligent vision system. J Semicond, 2025, 46(2), 021404 doi: 10.1088/1674-4926/24100042
[4]
Ye B Y, Liu X, Wu C, et al. Synaptic devices based on silicon carbide for neuromorphic computing. J Semicond, 2025, 46(2), 021403 doi: 10.1088/1674-4926/24100020
[5]
Guo P, Zhang J Y, Huang J. Recent progress in organic optoelectronic synaptic transistor arrays: fabricationstrategies and innovative applications of system integration. J Semicond, 2025, 46(2), 021405 doi: 10.1088/1674-4926/24120017
[6]
Yang L B, Gu X S, Zhou M, et al. Deep-UV-photo-excited synaptic Ga2O3 nano-device withlow-energy consumption for neuromorphic computing. J Semicond, 2025, 46(2), 022401 doi: 10.1088/1674-4926/24050037
[7]
Zhong B W, Qin X K, Li Z X, et al. Electropolymerized dopamine-based memristorsusing threshold switching behaviors for artificial current-activated spiking neurons. J Semicond, 2025, 46(2), 022402 doi: 10.1088/1674-4926/24070007
[8]
Pu X R, Shu F, Wang Q F, et al. Visual synapse based on reconfigurable organic photovoltaic cell. J Semicond, 2025, 46(2), 022403 doi: 10.1088/1674-4926/24080018
[9]
Zhan T, Sun J W, Lin J, et al. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing. J Semicond, 2025, 46(2), 022404 doi: 10.1088/1674-4926/24080049
[10]
Jiang J Y, Ding B X, Li S Y, et al. All-opticalnonlinear activation functions realized on phase-change photonic integrated circuits with microheaters. J Semicond, 2025, 46(2), 022405 doi: 10.1088/1674-4926/24090045
[11]
Ma X Q, Zhang W B, Zheng Q, et al. Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access. J Semicond, 2025, 46(2), 022406 doi: 10.1088/1674-4926/24090051
[12]
Tian Q L, Xun K, Li Z Z, et al. Optoelectronic memristor based on a-C: Te film for muti-mode reservoir computing. J Semicond, 2025, 46(2), 022407 doi: 10.1088/1674-4926/24100008
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    History

    Received: 08 February 2025 Revised: Online: Accepted Manuscript: 09 February 2025Uncorrected proof: 11 February 2025Published: 15 February 2025

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      Zhenyi Ni, Zhongqiang Wang, Jia Huang, Xiaodong Pi. Preface to Special Issue on Optoelectronic Neuromorphic Devices[J]. Journal of Semiconductors, 2025, 46(2): 020101. doi: 10.1088/1674-4926/25020802 ****Z Y Ni, Z Q Wang, J Huang, and X D Pi, Preface to Special Issue on Optoelectronic Neuromorphic Devices[J]. J. Semicond., 2025, 46(2), 020101 doi: 10.1088/1674-4926/25020802
      Citation:
      Zhenyi Ni, Zhongqiang Wang, Jia Huang, Xiaodong Pi. Preface to Special Issue on Optoelectronic Neuromorphic Devices[J]. Journal of Semiconductors, 2025, 46(2): 020101. doi: 10.1088/1674-4926/25020802 ****
      Z Y Ni, Z Q Wang, J Huang, and X D Pi, Preface to Special Issue on Optoelectronic Neuromorphic Devices[J]. J. Semicond., 2025, 46(2), 020101 doi: 10.1088/1674-4926/25020802

      Preface to Special Issue on Optoelectronic Neuromorphic Devices

      DOI: 10.1088/1674-4926/25020802
      CSTR: 32376.14.1674-4926.25020802
      More Information
      • Zhenyi Ni received his PhD degree at Zhejiang University in 2016. He then carried out research as a postdoctoral researcher at Zhejiang University and the University of North Carolina at Chapel Hill. He joined Zhejiang University as a ZJU100 Young Professor in 2022. His research focuses on semiconductor devices and material physics
      • Zhongqiang Wang received his PhD degree at Northeast Normal University in 2013. He then carried out postdoctoral work at the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano. He is now a professor in the Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education, Northeast Normal University. His research interests are the development of resistive in-memory devices and memristive synaptic devices
      • Jia Huang is a professor of materials science and engineering at Tongji University in Shanghai, China. He received his B.Sc. at the University of Science and Technology of China, and his Ph.D. in Materials Science and Engineering at Johns Hopkins University, USA. His current research focuses on organic semiconductors, flexible electronics, thin-film transistors, sensors and synaptic devices
      • Xiaodong Pi received his PhD degree at the University of Bath in 2004. He then carried out research at McMaster University and the University of Minnesota at Twin Cities. He joined Zhejiang University as an associate professor in 2008. He is now a professor in the State Key Laboratory of Silicon and Advanced Semiconductor Materials, the School of Materials Science and Engineering and Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University. His research mainly concerns group Ⅳ semiconductor materials and devices
      • Corresponding author: zyni@zju.edu.cnwangzq752@nenu.edu.cnhuangjia@tongji.edu.cnxdpi@zju.edu.cn
      • Received Date: 2025-02-08
        Available Online: 2025-02-09

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