1.1 kV/0.72 GW/cm2 β-Ga2O3 Fin-channel diode with ohmic contacts anode

Gaofu Guo; Xiaodong Zhang; Chunhong Zeng; Dong Wei; Dengrui Zhao; Tiwei Chen; Zhucheng Li; Anjing Luo; Guangyuan Yu; Yu Hu; Zhongming Zeng; Baoshun Zhang; Xianqi Dai

doi:10.1088/1674-4926/25050032

J. Semicond. > Just Accepted

ARTICLES

1.1 kV/0.72 GW/cm² β-Ga₂O₃ Fin-channel diode with ohmic contacts anode

Gaofu Guo^{1, 2}, Xiaodong Zhang², Chunhong Zeng², Dong Wei¹, Dengrui Zhao^{1, 2}, Tiwei Chen², Zhucheng Li², Anjing Luo², Guangyuan Yu^{2, 3}, Yu Hu², Zhongming Zeng², Baoshun Zhang^2, and Xianqi Dai^1,

+ Author Affiliations

Corresponding author: Baoshun Zhang, bszhang2006@sinano.ac.cn; Xianqi Dai, xqdai@htu.edu.cn

DOI: 10.1088/1674-4926/25050032CSTR: 10.1088/1674-4926/25050032

Abstract: This study presents a β-Ga₂O₃ diode featuring a Fin-channel structure and an anode ohmic contact. The device turn-off is facilitated by the depletion effect induced by the work function difference between the sidewall metal and β-Ga₂O₃. As the forward bias increases, electron accumulation occurs on the fin channel sidewalls, reducing the on-resistance and improving the forward characteristics. Moreover, the device exhibits the reduced surface field (RESURF) effect, similar to trench schottky barrier diodes (SBDs), which shifts the electric field at the fin corners and enhances the breakdown voltage. For a device with a 100 nm fin width (W_fin), we achieved a breakdown voltage (BV) of 1137 V, a specific on-resistance (R_on,sp) of 1.8 mΩ·cm², and a power figure of merit (PFOM) of 0.72 GW/cm². This work expands the fabrication approach for β-Ga₂O₃-based devices, advancing their potential for high-performance applications.

Key words: β-Ga₂O₃, Fin-channel diode, self-align, RESUFE, breakdown voltage

References

[1]	Waseem A, Ren Z J, Huang H C, et al. A review of recent progress in β-Ga₂O₃ Epitaxial growth: Effect of substrate orientation and precursors in metal−organic chemical vapor deposition. Phys Status Solidi A, 2023, 220(8), 2200616 doi: 10.1002/pssa.202200616
[2]	Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga₂O₃ materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[3]	Spencer J A, Mock A L, Jacobs A G, et al. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃. Appl Phys Rev, 2022, 9, 011315 doi: 10.1063/5.0078037
[4]	Peterson C, Bhattacharyya A, Chanchaiworawit K, et al. 200 cm2/Vs electron mobility and controlled low 1015 Cm−3 Si doping in (010) β-Ga₂O₃ epitaxial drift layers. Appl Phys Lett, 2024, 125(18), 182103 doi: 10.1063/5.0230413
[5]	Higashiwaki M, Wong M H. Beta-gallium oxide material and device technologies. Annu Rev Mater Res, 2024, 54, 175 doi: 10.1146/annurev-matsci-080921-104058
[6]	Zheng X Q, Zhao H P, Feng P X. A perspective on β-Ga₂O₃ micro/nanoelectromechanical systems. Appl Phys Lett, 2022, 120(4), 040502 doi: 10.1063/5.0073005
[7]	Green A J, Speck J, Xing G, Moens P, Allerstam F, Gumaelius K, Neyer T, Arias-Purdue A, Mehrotra V, Kuramata A, et al. β-Gallium oxide power electronics. APL Mater, 2022, 10(2), 029201 doi: 10.1063/5.0060327
[8]	Jamwal N S, Kiani A. Gallium oxide nanostructures: A review of synthesis, properties and applications. Nanomaterials, 2022, 12(12), 2061 doi: 10.3390/nano12122061
[9]	Qin Y, Wang Z P, Sasaki K, et al. Recent progress of Ga₂O₃ power technology: Large-area devices, packaging and applications. Jpn J Appl Phys, 2023, 62, SF0801 doi: 10.35848/1347-4065/acb3d3
[10]	Kim K H, Choa S H. Recent overview on power semiconductor devices and package module technology. J Microelectron Packag Soc, 2019, 26(3), 15
[11]	Igarashi T, Ueda Y, Koshi K, et al. Growth of 6 inch diameter β-Ga₂O₃ crystal by the vertical bridgman method. Phys Status Solidi B:, 2025, 262(8), 2400444 doi: 10.1002/pssb.202400444
[12]	Zhou J B, Zhou X Z, Liu Q, et al. Vertical β-Ga₂O₃ power transistors: Fundamentals, designs, and opportunities. IEEE Trans Electron Devices, 71(3), 1513
[13]	Varley J B, Weber J R, Janotti A, et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Appl Phys Lett, 2010, 97(14), 142106 doi: 10.1063/1.3499306
[14]	Ho Q D, Frauenheim T, Deák P. Theoretical confirmation of the polaron model for the Mg acceptor in β-Ga₂O₃. J Appl Phys, 2018, 124(14), 145702 doi: 10.1063/1.5049861
[15]	Gong H H, Yang X, Porter M, et al. Reliability of NiO/β-Ga₂O₃ bipolar heterojunction. Appl Phys Lett, 2025, 126, 012102 doi: 10.1063/5.0243015
[16]	Ding M F, Hao W B, Yu S J, et al. Self-powered p-NiO/n-Ga₂O₃ heterojunction solar-blind photodetector with record detectivity and open circuit voltage. IEEE Electron Device Lett, 2023, 44(2), 277 doi: 10.1109/LED.2022.3227583
[17]	Wang B Y, Xiao M, Spencer J, et al. 2.5 kV vertical Ga₂O₃ Schottky rectifier with graded junction termination extension. IEEE Electron Device Lett, 2023, 44(2), 221 doi: 10.1109/LED.2022.3229222
[18]	Ma Y, Qin Y, Porter M, Spencer J, Du Z, Xiao M, Wang B, Wang Y, Jacobs A G, Wang H, et al. Wide-bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices. Adv Electron Mater, 2025, 11(1), 2300662 doi: 10.1002/aelm.202300662
[19]	Li W S, Nomoto K, Hu Z Y, et al. ON-resistance of Ga₂O₃ trench-MOS Schottky barrier diodes: Role of sidewall interface trapping. IEEE Trans Electron Devices, 2021, 68(5), 2420 doi: 10.1109/TED.2021.3067856
[20]	He Q M, Zhou X Z, Li Q Y, et al. Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications. IEEE Electron Device Lett, 2022, 43(11), 1933 doi: 10.1109/LED.2022.3205326
[21]	Su C X, Zhou H, Zhang K, et al. Low turn-on voltage and 2.3 kV β-Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode. Appl Phys Lett, 2024, 124(17), 173506
[22]	Gong H H, Zhou F, Yu X X, et al. 70-μm-body Ga₂O₃ Schottky barrier diode with 1.48 K/W thermal resistance, 59 A surge current and 98.9% conversion efficiency. IEEE Electron Device Lett, 2022, 43(5), 773 doi: 10.1109/LED.2022.3162393
[23]	Hong Y H, Zheng X F, He Y L, et al. Leakage current reduction in β-Ga₂O₃ Schottky barrier diode with p-NiO_x guard ring. Appl Phys Lett, 2022, 121(21), 212102 doi: 10.1063/5.0128736
[24]	Zhang Y N, Zhang J C, Feng Z Q, et al. Impact of implanted edge termination on vertical β-Ga₂O₃ Schottky barrier diodes under OFF-state stressing. IEEE Trans Electron Devices, 67(10), 3948
[25]	Chen H, Wang H Y, Sheng K. Vertical β-Ga₂O₃ Schottky barrier diodes with field plate assisted negative beveled termination and positive beveled termination. IEEE Electron Device Lett, 2023, 44(1), 21 doi: 10.1109/LED.2022.3222878
[26]	Wan J, Wang H, Wang C, Chen H, Zhang C, Zhang L, Li Y, Sheng K. 2.5 kV/3.78 MW·cm² low forward voltage vertical β-Ga₂O₃ Schottky rectifier with field plate assisted deep mesa termination. IEEE Electron Device Lett, 2024, 45(5), 778 doi: 10.1109/LED.2024.3375852
[27]	Yan Q L, Gong H H, Zhou H, et al. Low density of interface trap states and temperature dependence study of Ga₂O₃ Schottky barrier diode with p-NiO_x termination. Appl Phys Lett, 2022, 120(9), 092106 doi: 10.1063/5.0082377
[28]	Li W S, Hu Z Y, Nomoto K, et al. 2.44 kV Ga₂O₃ vertical trench Schottky barrier diodes with very low reverse leakage current. 2018 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2018, 8.5.1
[29]	Hu Z, Nomoto K, Li W, Zhang L J, Shin J H, Tanen N, Nakamura T, Jena D, Xing H G. Vertical fin β-Ga2O3 power field-effect transistors with on/off ratio > 10⁹. Annual Device Research Conference (DRC), 2017, 7999512
[30]	Hu Z Y, Nomoto K, Li W S, et al. Enhancement-mode Ga₂O₃ vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 39(6), 869
[31]	Li W, Nomoto K, Hu Z, et al. Single and multi-fin normally-off Ga₂O₃ vertical transistors with a breakdown voltage over 2.6 kV. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2019, 12.4.1
[32]	Wei Y X, Lu J, Jiang Z L, et al. Low turn-on voltage and high breakdown voltage β-Ga₂O₃ diode with fin channel and ohmic contact anode. IEEE Trans Electron Devices, 70(1), 196
[33]	Wei Y X, Peng X S, Jiang Z L, et al. Low reverse conduction loss β-Ga₂O₃ vertical FinFET with an integrated fin diode. IEEE Trans Electron Devices, 70(7), 3454

Fig. 1. (Color online) Complete process flow of the vertical β-Ga₂O₃ Fin-channel Diode fabrication.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (a) Schematic 3D view of β-Ga₂O₃ diode with fin-channel. (b) Scanning electron microscopy (SEM) cross-section image with a designed fin width of 300 nm.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Schematic 3D view of β-Ga₂O₃ diode with fin-channel. (b) Scanning electron microscopy (SEM) cross-section image with a designed fin width of 300 nm. (c) Schematic illustration of lateral current spreading in the device cross-section. (d) C−V and 1/C²−V plots o-f the SBD with extracted doping of 1.68×10¹⁶ cm⁻³.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a)−(d) Simulate electron current density distribution of the device with W_fin of 200 nm under diﬀerent forward bias voltagesthe black line in the channel is the depletion line. (a) 0 V; (b) 2.0 V; (c) 5.0 V; (d) −5.0 V.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Diode forward I-V characteristics of fins of diﬀerent sizes measured by DC scanning (a) on a linear scale and (b) on a logarithmic scale. (c)R_on,sp extracted from Fig.1 (a). (d) The forward V_on of the device of diﬀerent sizes and the forward current of the device at 5 V voltage.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) Reverse I-V characteristics of five diﬀerent W_fin devices in a semi-log scale. (b) Simulated electric field distribution of the device at oﬀ-state with a breakdown voltage of 1062 V. (c) and (d) provide localized views of diﬀerent regions.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) ON-resistance versus breakdown voltage benchmark state-of-the-art of β-Ga₂O₃ vertical diode, and trench SBDs, of this work and as reported in the literature.

DownLoad: Full-Size Img PowerPoint

[1]	Waseem A, Ren Z J, Huang H C, et al. A review of recent progress in β-Ga₂O₃ Epitaxial growth: Effect of substrate orientation and precursors in metal−organic chemical vapor deposition. Phys Status Solidi A, 2023, 220(8), 2200616 doi: 10.1002/pssa.202200616
[2]	Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga₂O₃ materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[3]	Spencer J A, Mock A L, Jacobs A G, et al. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃. Appl Phys Rev, 2022, 9, 011315 doi: 10.1063/5.0078037
[4]	Peterson C, Bhattacharyya A, Chanchaiworawit K, et al. 200 cm2/Vs electron mobility and controlled low 1015 Cm−3 Si doping in (010) β-Ga₂O₃ epitaxial drift layers. Appl Phys Lett, 2024, 125(18), 182103 doi: 10.1063/5.0230413
[5]	Higashiwaki M, Wong M H. Beta-gallium oxide material and device technologies. Annu Rev Mater Res, 2024, 54, 175 doi: 10.1146/annurev-matsci-080921-104058
[6]	Zheng X Q, Zhao H P, Feng P X. A perspective on β-Ga₂O₃ micro/nanoelectromechanical systems. Appl Phys Lett, 2022, 120(4), 040502 doi: 10.1063/5.0073005
[7]	Green A J, Speck J, Xing G, Moens P, Allerstam F, Gumaelius K, Neyer T, Arias-Purdue A, Mehrotra V, Kuramata A, et al. β-Gallium oxide power electronics. APL Mater, 2022, 10(2), 029201 doi: 10.1063/5.0060327
[8]	Jamwal N S, Kiani A. Gallium oxide nanostructures: A review of synthesis, properties and applications. Nanomaterials, 2022, 12(12), 2061 doi: 10.3390/nano12122061
[9]	Qin Y, Wang Z P, Sasaki K, et al. Recent progress of Ga₂O₃ power technology: Large-area devices, packaging and applications. Jpn J Appl Phys, 2023, 62, SF0801 doi: 10.35848/1347-4065/acb3d3
[10]	Kim K H, Choa S H. Recent overview on power semiconductor devices and package module technology. J Microelectron Packag Soc, 2019, 26(3), 15
[11]	Igarashi T, Ueda Y, Koshi K, et al. Growth of 6 inch diameter β-Ga₂O₃ crystal by the vertical bridgman method. Phys Status Solidi B:, 2025, 262(8), 2400444 doi: 10.1002/pssb.202400444
[12]	Zhou J B, Zhou X Z, Liu Q, et al. Vertical β-Ga₂O₃ power transistors: Fundamentals, designs, and opportunities. IEEE Trans Electron Devices, 71(3), 1513
[13]	Varley J B, Weber J R, Janotti A, et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Appl Phys Lett, 2010, 97(14), 142106 doi: 10.1063/1.3499306
[14]	Ho Q D, Frauenheim T, Deák P. Theoretical confirmation of the polaron model for the Mg acceptor in β-Ga₂O₃. J Appl Phys, 2018, 124(14), 145702 doi: 10.1063/1.5049861
[15]	Gong H H, Yang X, Porter M, et al. Reliability of NiO/β-Ga₂O₃ bipolar heterojunction. Appl Phys Lett, 2025, 126, 012102 doi: 10.1063/5.0243015
[16]	Ding M F, Hao W B, Yu S J, et al. Self-powered p-NiO/n-Ga₂O₃ heterojunction solar-blind photodetector with record detectivity and open circuit voltage. IEEE Electron Device Lett, 2023, 44(2), 277 doi: 10.1109/LED.2022.3227583
[17]	Wang B Y, Xiao M, Spencer J, et al. 2.5 kV vertical Ga₂O₃ Schottky rectifier with graded junction termination extension. IEEE Electron Device Lett, 2023, 44(2), 221 doi: 10.1109/LED.2022.3229222
[18]	Ma Y, Qin Y, Porter M, Spencer J, Du Z, Xiao M, Wang B, Wang Y, Jacobs A G, Wang H, et al. Wide-bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices. Adv Electron Mater, 2025, 11(1), 2300662 doi: 10.1002/aelm.202300662
[19]	Li W S, Nomoto K, Hu Z Y, et al. ON-resistance of Ga₂O₃ trench-MOS Schottky barrier diodes: Role of sidewall interface trapping. IEEE Trans Electron Devices, 2021, 68(5), 2420 doi: 10.1109/TED.2021.3067856
[20]	He Q M, Zhou X Z, Li Q Y, et al. Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications. IEEE Electron Device Lett, 2022, 43(11), 1933 doi: 10.1109/LED.2022.3205326
[21]	Su C X, Zhou H, Zhang K, et al. Low turn-on voltage and 2.3 kV β-Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode. Appl Phys Lett, 2024, 124(17), 173506
[22]	Gong H H, Zhou F, Yu X X, et al. 70-μm-body Ga₂O₃ Schottky barrier diode with 1.48 K/W thermal resistance, 59 A surge current and 98.9% conversion efficiency. IEEE Electron Device Lett, 2022, 43(5), 773 doi: 10.1109/LED.2022.3162393
[23]	Hong Y H, Zheng X F, He Y L, et al. Leakage current reduction in β-Ga₂O₃ Schottky barrier diode with p-NiO_x guard ring. Appl Phys Lett, 2022, 121(21), 212102 doi: 10.1063/5.0128736
[24]	Zhang Y N, Zhang J C, Feng Z Q, et al. Impact of implanted edge termination on vertical β-Ga₂O₃ Schottky barrier diodes under OFF-state stressing. IEEE Trans Electron Devices, 67(10), 3948
[25]	Chen H, Wang H Y, Sheng K. Vertical β-Ga₂O₃ Schottky barrier diodes with field plate assisted negative beveled termination and positive beveled termination. IEEE Electron Device Lett, 2023, 44(1), 21 doi: 10.1109/LED.2022.3222878
[26]	Wan J, Wang H, Wang C, Chen H, Zhang C, Zhang L, Li Y, Sheng K. 2.5 kV/3.78 MW·cm² low forward voltage vertical β-Ga₂O₃ Schottky rectifier with field plate assisted deep mesa termination. IEEE Electron Device Lett, 2024, 45(5), 778 doi: 10.1109/LED.2024.3375852
[27]	Yan Q L, Gong H H, Zhou H, et al. Low density of interface trap states and temperature dependence study of Ga₂O₃ Schottky barrier diode with p-NiO_x termination. Appl Phys Lett, 2022, 120(9), 092106 doi: 10.1063/5.0082377
[28]	Li W S, Hu Z Y, Nomoto K, et al. 2.44 kV Ga₂O₃ vertical trench Schottky barrier diodes with very low reverse leakage current. 2018 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2018, 8.5.1
[29]	Hu Z, Nomoto K, Li W, Zhang L J, Shin J H, Tanen N, Nakamura T, Jena D, Xing H G. Vertical fin β-Ga2O3 power field-effect transistors with on/off ratio > 10⁹. Annual Device Research Conference (DRC), 2017, 7999512
[30]	Hu Z Y, Nomoto K, Li W S, et al. Enhancement-mode Ga₂O₃ vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 39(6), 869
[31]	Li W, Nomoto K, Hu Z, et al. Single and multi-fin normally-off Ga₂O₃ vertical transistors with a breakdown voltage over 2.6 kV. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2019, 12.4.1
[32]	Wei Y X, Lu J, Jiang Z L, et al. Low turn-on voltage and high breakdown voltage β-Ga₂O₃ diode with fin channel and ohmic contact anode. IEEE Trans Electron Devices, 70(1), 196
[33]	Wei Y X, Peng X S, Jiang Z L, et al. Low reverse conduction loss β-Ga₂O₃ vertical FinFET with an integrated fin diode. IEEE Trans Electron Devices, 70(7), 3454

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Received: 26 May 2025 Revised: 08 September 2025 Online: Accepted Manuscript: 30 October 2025

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Gaofu Guo, Xiaodong Zhang, Chunhong Zeng, Dong Wei, Dengrui Zhao, Tiwei Chen, Zhucheng Li, Anjing Luo, Guangyuan Yu, Yu Hu, Zhongming Zeng, Baoshun Zhang, Xianqi Dai. 1.1 kV/0.72 GW/cm2 β-Ga2O3 Fin-channel diode with ohmic contacts anode[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/25050032 ****G F Guo, X D Zhang, C H Zeng, D Wei, D R Zhao, T W Chen, Z C Li, A J Luo, G Y Yu, Y Hu, Z M Zeng, B S Zhang, and X Q Dai, 1.1 kV/0.72 GW/cm2 β-Ga2O3 Fin-channel diode with ohmic contacts anode[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/25050032

Citation:

G F Guo, X D Zhang, C H Zeng, D Wei, D R Zhao, T W Chen, Z C Li, A J Luo, G Y Yu, Y Hu, Z M Zeng, B S Zhang, and X Q Dai, 1.1 kV/0.72 GW/cm² β-Ga₂O₃ Fin-channel diode with ohmic contacts anode[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/25050032

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1.1 kV/0.72 GW/cm² β-Ga₂O₃ Fin-channel diode with ohmic contacts anode

DOI: 10.1088/1674-4926/25050032

CSTR: 10.1088/1674-4926/25050032

1.
School of Physics, Henan Normal University, Xinxiang, 453007, China
2.
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
3.
School of Microelectronics, University of Science and Tecgnology of China, Hefei, 230026, China

More Information

Gaofu Guo received his B.S. degree from Zhengzhou Normal University and is currently pursuing his Ph.D. degree at Henan Normal University. His research focuses on the design, fabrication, and performance optimization of vertical β-Ga₂O₃ power devices
Baoshun Zhang received his BS degree from Changchun University of Science and Technology in 1994 and PhD degree from the Institute of Semiconductors, Chinese Academy of Sciences in 2003. Then he joined in Hong Kong University of Science and Technology. Currently, he is a researcher at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, and his research interests include semiconductor material growth and device technology research
Xianqi Dai received his Ph.D. degree in Physics from the University of Hong Kong in 2002. He is currently a Professor at the School of Physics, Henan Normal University. His research focuses on the physical properties of wide bandgap semiconductors and two-dimensional quantum materials
Corresponding author: bszhang2006@sinano.ac.cn; xqdai@htu.edu.cn
Received Date: 2025-05-26
Revised Date: 2025-09-08

Available Online: 2025-10-30

Abstract

Abstract

This study presents a β-Ga₂O₃ diode featuring a Fin-channel structure and an anode ohmic contact. The device turn-off is facilitated by the depletion effect induced by the work function difference between the sidewall metal and β-Ga₂O₃. As the forward bias increases, electron accumulation occurs on the fin channel sidewalls, reducing the on-resistance and improving the forward characteristics. Moreover, the device exhibits the reduced surface field (RESURF) effect, similar to trench schottky barrier diodes (SBDs), which shifts the electric field at the fin corners and enhances the breakdown voltage. For a device with a 100 nm fin width (W_fin), we achieved a breakdown voltage (BV) of 1137 V, a specific on-resistance (R_on,sp) of 1.8 mΩ·cm², and a power figure of merit (PFOM) of 0.72 GW/cm². This work expands the fabrication approach for β-Ga₂O₃-based devices, advancing their potential for high-performance applications.
- β-Ga₂O₃,
- Fin-channel diode,
- self-align,
- RESUFE,
- breakdown voltage

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References(33)