Haoyu Peng is an undergraduate student at the University of the Chinese Academy of Sciences. He recently completed a research internship in the experimental group of Jiangbin Wu at the Institute of Semiconductors, Chinese Academy of Sciences.
Ping-Heng Tan is a professor at the Institute of Semiconductors, Chinese Academy of Sciences. He obtained his B.S. degree in Physics from Peking University in 1996 and his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2001. From 2001 to 2003, he worked as a postdoctoral research associate at the Walter Schottky Institute of the Technical University of Munich. He was a K. C. Wong Royal Society Fellow at the University of Cambridge from 2006 to 2007. His current research focuses on two-dimensional layered materials, carbon nanomaterials, topological insulators, and other novel low-dimensional semiconductor optoelectronic materials. In 2012, he received the National Science Fund for Distinguished Young Scholars.
Jiangbin Wu has been a professor at the Institute of Semiconductors, Chinese Academy of Sciences since 2023. He received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2017. Then he worked as a postdoctoral research associate at the University of Southern California until 2023. His research interests include exploring the optoelectronic properties of new low-dimensional materials, controlling their properties, and building high-performance semiconductor devices based on these materials. His publications have received a total of more than 11 000 citations with a h index of 36 as of August 2025.
Fig. 1.
(Color online) (a) Diagram illustrating key steps in the $ {\mathrm{W}\mathrm{S}\mathrm{e}}_{2} $ transfer process, along with photographs of samples with different surface treatments, and the resulting transfer characteristics of $ {\mathrm{W}\mathrm{S}\mathrm{e}}_{2} $ p-FETs. (b) Process flow for reducing beam-induced damage in the contact region, and transfer characteristics of $ {\mathrm{W}\mathrm{S}\mathrm{e}}_{2} $ p-FETs with and without an SCB layer and contact liner. (c)Transfer characteristics of $ {\mathrm{W}\mathrm{S}\mathrm{e}}_{2} $ p-FETs with a scaled gate dielectric (4 nm $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{{x}} $ alongside a high-resolution cross-sectional TEM image of the device structure. (d)Key steps in post-fabrication channel treatments, showing transfer curves of $ {\mathrm{W}\mathrm{S}\mathrm{e}}_{2} $ p-FETs with and without a free-radical treatment, and a comparison of device performance before and after one week of ambient aging[11].
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