Fig. 1.
(Color online) Cross-sectional schematics of (a) the conventional and (b) proposed CFP-LDMOS.
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Journal of Semiconductors
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2026
> Accepted Manuscript
| Citation: |
Yiting Ye, Xiaoyun Huang, Yixian Song, Kai Xu. A novel split gate and contact-field-plate LDMOS with enhanced BV−Ron,sp trade-off and improved FOM[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/25080033
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Y T Ye, X Y Huang, Y X Song, and K Xu, A novel split gate and contact-field-plate LDMOS with enhanced BV−Ron,sp trade-off and improved FOM[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/25080033
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A novel split gate and contact-field-plate LDMOS with enhanced BV−Ron,sp trade-off and improved FOM
DOI: 10.1088/1674-4926/25080033
CSTR: 32376.14.1674-4926.25080033
More Information-
Yiting Ye got her BS degree from Central South University in 2024. Now she is a Master student at Zhejiang University under the supervision of Prof. Kai Xu. Her research focuses on lateral diffused metal-oxide-semiconductor (LDMOS) transistors -
Kai Xu got his PhD degree in 2017 at the National Center for Nanoscience and Technology. Then he went to University of Illinois Urbana-Champaign as a postdoc. In October 2021, he joined ZJU-Hangzhou Global Scientific and Technological Innovation Center as independent principal investigator. His research interests include semiconductor power devices and integration, intelligent manufacturing of integrated circuits and heterogeneous integration - Corresponding author: xuk@zju.edu.cn
- Revised Date: 2025-12-01 Available Online: 2026-01-31
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Abstract
To improve the breakdown voltage (BV)−specific on-resistance (Ron,sp) trade-off and enhance manufacturability, this article proposes a novel lateral diffused metal-oxide-semiconductor (LDMOS) structure that features a split gate and split contact field plate (CFP). This novel structure requires no additional bias voltages, masks, or process steps, making it fully compatible with the bipolar-CMOS-DMOS (BCD) process flow. The physical mechanisms are elucidated through Technology computer-aided design (TCAD) simulations. In the on-state, the positively biased split gate forms an accumulation layer at the drift region surface, thereby reducing Ron,sp. In the off-state, both the split gate and split CFP introduce additional electric-field peaks that smooth the lateral electric field, thus preserving a high BV. Compared with the conventional CFP-LDMOS, the proposed CFP-LDMOS achieves an 8.52% reduction in Ron,sp without compromising BV, leading to an 8.07% improvement in the figure of merit (FOM). Notably, the proposed structure can be extended to LDMOS devices across different voltage levels within BCD platforms, demonstrating its broad applicability. -
References
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