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The limits of electrical transport in thin GaN channels on N-polar AlN

Yoann Robin1, , Itsuki Furuhashi1 and Markus Pristovsek2,

+ Author Affiliations

 Corresponding author: Yoann Robin, yoann.robin2019@gmail.com; Markus Pristovsek, markus.pristovsek@nagoya-u.jp

DOI: 10.1088/1674-4926/26010034CSTR: 32376.14.1674-4926.26010034

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Abstract: We have systematically studied the impact of thickness on the electrical properties of thin GaN channels on N-polar AlN (0001) templates grown on sapphire. The observed increase in sheet carrier density with increasing GaN thickness can be quantitatively reproduced by calculations assuming a Fermi-level pinning about 0.8 eV below the conduction band. The mobility strongly increases until 6 nm which correlates with reduced overlap of the 2DEG wave function with the surface layer. The mobility then increases more gradually up to 10 nm, corresponding to a reduced fraction of the 2DEG within the first 0.5 nm near the AlN/GaN interface, namely, the region affected by interface roughness. The mobility saturates at approximately 400 cm2·V−1·s−1, probably limited by dislocations and the overlap with deep traps inside the AlN back barrier. If the GaN thickness exceeds 15 nm, the mobility decreases, likely due to the onset of gradual relaxation and appearance of misfit dislocations. Finally, we note that the temperature-dependent mobility exhibits an unexpected contribution proportional to $ T^{-2} $ for all GaN channels on N-polar AlN, including those reported in the literature. Such observation may be explained by a 50% higher effective mass of the electron, which amplify the electron-phonon scattering, ultimately limiting the room-temperature mobility to about 750 cm2·V−1·s−1 and confining the sheet resistivity to values above 200 Ω/□.



[1]
Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87(1): 334 doi: 10.1063/1.371866
[2]
Xie J, Mita S, Collazo R, et al. The effect of N-polar GaN domains as Ohmic contacts. Appl Phys Lett, 2010, 97(12): 123502 doi: 10.1063/1.3491173
[3]
Wong M H, Keller S, Dasgupta N S, et al. N-polar GaN epitaxy and high electron mobility transistors. Semicond Sci Technol, 2013, 28(7): 074009 doi: 10.1088/0268-1242/28/7/074009
[4]
Kim E, Zhang Z X, Singhal J, et al. First demonstration of N-polar GaN/AlGaN/AlN HEMT on single crystal AlN substrates. 2022 Device Research Conference (DRC), 2022: 1 doi: 10.1109/drc55272.2022.9855776
[5]
Kim E, Zhang Z X, Encomendero J, et al. N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates. Appl Phys Lett, 2023, 122(9): 092104 doi: 10.1063/5.0138939
[6]
Zazuli A H, Kowaki T, Miyamoto M, et al. Electrical properties of N-polar GaN/AlGaN/AlN grown via metal-organic vapor phase epitaxy. Phys Status Solidi A, 2024, 221(21): 2400060 doi: 10.1002/pssa.202400060
[7]
Kowaki T, Hanasaku K, Miyamoto M, et al. Effect of the twist crystallinity of N-polar AlN underlayer on the electrical properties of GaN/AlN structures. Phys Status Solidi A, 2024, 221(21): 2400053 doi: 10.1002/pssa.202400053
[8]
Yoshikawa A, Nagatomi T, Nagase K, et al. Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy. Jpn J Appl Phys, 2024, 63(6): 060903 doi: 10.35848/1347-4065/ad565a
[9]
Zhang C Z, Yin Y D, Huang P, et al. N-polar AlN-based enhancement-mode transistor with p-NiOx gate stacks and reduced buffer trapping. J Phys D Appl Phys, 2025, 58(48): 485104 doi: 10.1088/1361-6463/ae161c
[10]
Furuhashi I, Pristovsek M, Yang X. N-polar GaN/AlN heterostructures on sapphire grown by metal-organic vapor phase epitaxy. J Crystal Growth, to be submitted
[11]
Pristovsek M, Furuhashi I, Yang X, et al. Two-dimensional electron gas in thin N-polar GaN channels on AlN on sapphire templates. Crystals, 2024, 14(9): 822 doi: 10.3390/cryst14090822
[12]
Pampili P, Pristovsek M. Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE. J Appl Phys, 2024, 135(19): 195303 doi: 10.1063/5.0202746
[13]
tibercad simulation package, 2024. http://www.tibercad.org/
[14]
Dreyer C E, Janotti A, Van de Walle C G, et al. Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides. Phys Rev X, 2016, 6(2): 021038 doi: 10.1103/physrevx.6.021038
[15]
Zazuli A H, Kowaki T, Miyamoto M, et al. Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET. Jpn J Appl Phys, 2024, 63(9): 09SP11 doi: 10.35848/1347-4065/ad6e8f
[16]
Miyamura M, Tachibana K, Arakawa Y. High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2002, 80(21): 3937 doi: 10.1063/1.1482416
[17]
Simeonov D, Feltin E, Carlin J F, et al. Stranski-Krastanov GaN∕AlN quantum dots grown by metal organic vapor phase epitaxy. J Appl Phys, 2006, 99(8): 083509 doi: 10.1063/1.2189975
[18]
Weinstein I A, Vokhmintsev A S, Spiridonov D M. Thermoluminescence kinetics of oxygen-related centers in AlN single crystals. Diam Relat Mater, 2012, 25: 59 doi: 10.1016/j.diamond.2012.02.004
[19]
Wang H, Chen A B. Calculation of shallow donor levels in GaN. J Appl Phys, 2000, 87(11): 7859 doi: 10.1063/1.373467
[20]
Chung B C, Gershenzon M. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy. J Appl Phys, 1992, 72(2): 651 doi: 10.1063/1.351848
[21]
Pristovsek M, Furuhashi I, Pampili P. Growth of N-polar (0001) GaN in metal–organic vapour phase epitaxy on sapphire. Crystals, 2023, 13(7): 1072 doi: 10.3390/cryst13071072
[22]
Reddy P, Bryan I, Bryan Z, et al. The effect of polarity and surface states on the Fermi level at III-nitride surfaces. J Appl Phys, 2014, 116(12): 123701 doi: 10.1063/1.4896377
[23]
Bartoš I, Romanyuk O, Houdkova J, et al. Electron band bending of polar, semipolar and non-polar GaN surfaces. J Appl Phys, 2016, 119(10): 105303 doi: 10.1063/1.4943592
[24]
Jana R K, Jena D. Stark-effect scattering in rough quantum wells. Appl Phys Lett, 2011, 99: 012104 doi: 10.1063/1.3607485
[25]
Singisetti U, Hoi Wong M, Mishra U K. Interface roughness scattering in ultra-thin N-polar GaN quantum well channels. Appl Phys Lett, 2012, 101: 012101 doi: 10.1063/1.4732795
[26]
Chen Y H, Encomendero J, Savant C, et al. Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates. Appl Phys Lett, 2024, 124(15): 152111 doi: 10.1063/5.0190822
[27]
Zhang Z X, Encomendero J, Kim E, et al. High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates. Appl Phys Lett, 2022, 121(8): 082107 doi: 10.1063/5.0107159
[28]
Vurgaftman I, Meyer J R. Band parameters for nitrogen-containing semiconductors. J Appl Phys, 2003, 94(6): 3675 doi: 10.1063/1.1600519
[29]
Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III–V compound semiconductors and their alloys. J Appl Phys, 2001, 89(11): 5815 doi: 10.1063/1.1368156
[30]
Gaska R, Shur M S, Bykhovski A D. Pyroelectric and piezoelectric properties of GaN-based materials. MRS Internet J Nitride Semicond Res, 1999, 4(1): 57 doi: 10.1557/S1092578300002246
[31]
Feneberg M, Thonke K. Polarization fields of III-nitrides grown in different crystal orientations. J Phys Condens Matter, 2007, 19(40): 403201 doi: 10.1088/0953-8984/19/40/403201
[32]
Nakamura N, Ogi H, Hirao M. Elastic, anelastic, and piezoelectric coefficients of GaN. J Appl Phys, 2012, 111: 013509 doi: 10.1063/1.3674271
[33]
Sedhain A, Li J, Lin J Y, et al. Probing exciton-phonon interaction in AlN epilayers by photoluminescence. Appl Phys Lett, 2009, 95(6): 061106 doi: 10.1063/1.3206672
[34]
Ilegems M, Dingle R, Logan R A. Luminescence of Zn- and Cd-doped GaN. J Appl Phys, 1972, 43(9): 3797 doi: 10.1063/1.1661813
[35]
Goldhahn R. Dielectric function of nitride semiconductors: Recent experimental results. Acta Phys Pol A, 2003, 104(2): 123 doi: 10.12693/aphyspola.104.123
[36]
Shokhovets S, Goldhahn R, Gobsch G, et al. Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry. J Appl Phys, 2003, 94(1): 307 doi: 10.1063/1.1582369
[37]
Akasaki I, Hashimoto M. Infrared lattice vibration of vapour-grown AlN. Solid State Commun, 1967, 5(11): 851 doi: 10.1016/0038-1098(67)90313-4
[38]
Barker A S, Ilegems M. Infrared lattice vibrations and free-electron dispersion in GaN. Phys Rev B, 1973, 7(2): 743 doi: 10.1103/PhysRevB.7.743
[39]
Yan Q M, Rinke P, Scheffler M, et al. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl Phys Lett, 2009, 95(12): 121111 doi: 10.1063/1.3236533
[40]
Shur M, Gelmont B, Asif Khan M. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN. J Electron Mater, 1996, 25(5): 777 doi: 10.1007/BF02666636
[41]
Zanato D, Gokden S, Balkan N, et al. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond Sci Technol, 2004, 19(3): 427 doi: 10.1088/0268-1242/19/3/024
[42]
Gurusinghe M N, Davidsson S K, Andersson T G. Two-dimensional electron mobility limitation mechanisms in AlxGa1–xN/GaN heterostructures. Phys Rev B, 2005, 72(4): 045316 doi: 10.1103/physrevb.72.045316
[43]
Alause H, Knap W, Azema S C, et al. Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures. Mater Sci Eng B, 1997, 46(1/2/3): 79 doi: 10.1016/s0921-5107(96)01936-8
[44]
Knap W, Contreras S, Alause H, et al. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface. Appl Phys Lett, 1997, 70(16): 2123 doi: 10.1063/1.118967
[45]
Pristovsek M., Robin Y, Effective mass is limiting the sheet resistance of 2-dimensional electron gases in the III-nitride system. Nature Electronics, submitted
Fig. 1.  (Color online) (a) $ 2 \times 2\;\mu $m2 AFM images of the GaN surface morphology for channel thicknesses of 4.1, 11.0, 15.4, 18.9 and 22.1 nm. The yellow arrow indicates the crystallographic orientation of the GaN layer and the small green arrows highlight the appearance of sharp trenches. The panel on the right of the AFM images summarizes the corresponding observed RMS surface roughness. (b) XRD RSMs recorded around the 1015 reflections. For channel thicknesses larger than 16.5 nm, a shoulder appears on the left side of the GaN peak (large arrow), indicating partial strain relaxation.

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Fig. 2.  (Color online) (a) Sheet resistance as a function of GaN channel thickness and additional data points from samples grown by MBE on bulk AlN by Cornell University (red)[5]. (b) RMS surface roughness as a function of sheet resistance for our samples (blue) and data from Yamaguchi University (red)[6, 7, 15]. (c) XRC FWHM of the 0002 and 1012 reflections as a function of sheet resistance. The open symbols represent our samples from earlier series grown under different growth conditions.

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Fig. 3.  (Color online) Dependence of the carrier density on the channel thickness for all of our 2DEG structures and from calculations using different surface Fermi level pinning as fitting parameter. The open symbols correspond to samples from an earlier series with different growth conditions. The inset shows the CB diagram for five different pinning levels calculated for a 10 nm thick GaN channel: at GaN surface, EF was set at CB, 0.8 eV below CB, midgap, 0.8 eV above VB, and at VB.

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Fig. 4.  (Color online) Dependence of the Hall mobility on the GaN channel thickness for all of our 2DEG structures at room temperature (294 K) and $ \mu_{0} $ extracted from Eq. (7).

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Fig. 5.  (Color online) (a) Conduction band edge and confined states inside the channel width of 4 nm and 8 nm. The wavefunctions were integrated over the red area to quantify the overlap with AlN and over the blue area to quantify the overlap with the surface, and subsequently multiplied by the state's occupancy at 300 K. (b) Spatial distribution of the 2DEG for channel width of 4, 8, and 12 nm. Here, the 2DEG is integrated over the green area. (c) Reciprocal mobility ($ \mu^{-1} $) at 294 K (brown), together with the calculated overlap of the states with the AlN (red), the overlap of the states with the surface (blue) - all normalized - and the fraction of the 2DEG located within the first 0.5 nm, i.e. the fraction most strongly affected by interface roughness.

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Fig. 6.  (Color online) (a) Temperature dependent mobility data (cross) with several fits from Eq. (7): without the additional term $ \mu_{\rm{extra}} $ (dashed grey line) and including $ \mu_{\rm{extra}} $ but with different exponents. The sheet carrier density is plotted on the right axis for further discussion. (b) Same temperature dependent mobility data (cross) but using different effective mass ranging from 0.2 to 0.3 instead of introducing $ \mu_{\rm{extra}} $ (c) Impact of the different mobilities assuming a $ \mu_{0} $ of $ 10^6 \;{\rm{cm}}^2\cdot{\rm{V}}^{-1}\cdot{\rm{s}}^{-1} $ and an effective mass $ {m^*}\;=0.2 $. The resulting total mobility is calculated both with (black) and without (grey) the additional $ \mu_{\rm{extra}} $ using $ \gamma=10^8 $ cm2·K2·V·−1s−1 and $ \alpha=2 $.

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Table 1.   Pyro-polarization $ P_{\rm{z}} $, piezoelectric tensor $ e_{\rm{ii}} $ and elastic stiffness tensor $ C_{\rm{ii}} $ elements used for semipolar band calculations a[28], b[29]. The piezo coefficients were averaged from the experimental values reported in c[30-32]. Note that $ e_{15} $ carries a large uncertainty even regarding its sign. The references for the elastic coefficients are in[11]. Similarly, only few data exist for $ C_{44} $. $ E_{\rm{Ph}} $ is from the phonon replica obtained by photoluminescence d[33], e[34]. Since our 2DEG is confined parallel to the (0001) surface, we assume $ \varepsilon_\infty\approx \varepsilon_\infty^\bot $ f[35, 36] and similar assuming $ \varepsilon_{\rm{s}}\approx\varepsilon_{\rm{s}}^\bot $ g[37], h[38]. Deformation potentials are partly taken from k[39], with $ D_1 $ and $ D_2 $ slightly reduced to match our recorded band gap shift of GaN

parameter AlN GaN
$ P_{\rm{z}} $ (C m−2) –0.090a –0.029b
$ e_{33} $ c (C m−2) –1.43 0.65
$ e_{31} $ c (C m−2) –0.52 -0.24
$ e_{15} $ c (C m−2) –0.48 –0.02
$ C_{11} $ (GPa) 348 362
$ C_{12} $ (GPa) 137 137
$ C_{13} $ (GPa) 109 105
$ C_{33} $ (GPa) 386 358
$ C_{44} $ (GPa) 120 90
$ m^* $ 0.3 0.2
$ E_{\rm{Ph}} $ (meV) 110d 91e
$ \varepsilon_\infty $ 4.3f 5.31f
$ \varepsilon_{\rm{s}} $ 8.5g 9.5h
$ D_1 $ (eV)j –17.1 –5.0
$ D_2 $ (eV)j 7.9 8.0
$ D_3 $ (eV)j 9.12 5.47
$ D_4 $ (eV)j –3.79 –2.98
$ D_5 $ (eV)j –3.23 –2.89
$ D_6 $ (eV)a –3.4 –5.5
DownLoad: CSV
[1]
Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87(1): 334 doi: 10.1063/1.371866
[2]
Xie J, Mita S, Collazo R, et al. The effect of N-polar GaN domains as Ohmic contacts. Appl Phys Lett, 2010, 97(12): 123502 doi: 10.1063/1.3491173
[3]
Wong M H, Keller S, Dasgupta N S, et al. N-polar GaN epitaxy and high electron mobility transistors. Semicond Sci Technol, 2013, 28(7): 074009 doi: 10.1088/0268-1242/28/7/074009
[4]
Kim E, Zhang Z X, Singhal J, et al. First demonstration of N-polar GaN/AlGaN/AlN HEMT on single crystal AlN substrates. 2022 Device Research Conference (DRC), 2022: 1 doi: 10.1109/drc55272.2022.9855776
[5]
Kim E, Zhang Z X, Encomendero J, et al. N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates. Appl Phys Lett, 2023, 122(9): 092104 doi: 10.1063/5.0138939
[6]
Zazuli A H, Kowaki T, Miyamoto M, et al. Electrical properties of N-polar GaN/AlGaN/AlN grown via metal-organic vapor phase epitaxy. Phys Status Solidi A, 2024, 221(21): 2400060 doi: 10.1002/pssa.202400060
[7]
Kowaki T, Hanasaku K, Miyamoto M, et al. Effect of the twist crystallinity of N-polar AlN underlayer on the electrical properties of GaN/AlN structures. Phys Status Solidi A, 2024, 221(21): 2400053 doi: 10.1002/pssa.202400053
[8]
Yoshikawa A, Nagatomi T, Nagase K, et al. Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy. Jpn J Appl Phys, 2024, 63(6): 060903 doi: 10.35848/1347-4065/ad565a
[9]
Zhang C Z, Yin Y D, Huang P, et al. N-polar AlN-based enhancement-mode transistor with p-NiOx gate stacks and reduced buffer trapping. J Phys D Appl Phys, 2025, 58(48): 485104 doi: 10.1088/1361-6463/ae161c
[10]
Furuhashi I, Pristovsek M, Yang X. N-polar GaN/AlN heterostructures on sapphire grown by metal-organic vapor phase epitaxy. J Crystal Growth, to be submitted
[11]
Pristovsek M, Furuhashi I, Yang X, et al. Two-dimensional electron gas in thin N-polar GaN channels on AlN on sapphire templates. Crystals, 2024, 14(9): 822 doi: 10.3390/cryst14090822
[12]
Pampili P, Pristovsek M. Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE. J Appl Phys, 2024, 135(19): 195303 doi: 10.1063/5.0202746
[13]
tibercad simulation package, 2024. http://www.tibercad.org/
[14]
Dreyer C E, Janotti A, Van de Walle C G, et al. Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides. Phys Rev X, 2016, 6(2): 021038 doi: 10.1103/physrevx.6.021038
[15]
Zazuli A H, Kowaki T, Miyamoto M, et al. Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET. Jpn J Appl Phys, 2024, 63(9): 09SP11 doi: 10.35848/1347-4065/ad6e8f
[16]
Miyamura M, Tachibana K, Arakawa Y. High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2002, 80(21): 3937 doi: 10.1063/1.1482416
[17]
Simeonov D, Feltin E, Carlin J F, et al. Stranski-Krastanov GaN∕AlN quantum dots grown by metal organic vapor phase epitaxy. J Appl Phys, 2006, 99(8): 083509 doi: 10.1063/1.2189975
[18]
Weinstein I A, Vokhmintsev A S, Spiridonov D M. Thermoluminescence kinetics of oxygen-related centers in AlN single crystals. Diam Relat Mater, 2012, 25: 59 doi: 10.1016/j.diamond.2012.02.004
[19]
Wang H, Chen A B. Calculation of shallow donor levels in GaN. J Appl Phys, 2000, 87(11): 7859 doi: 10.1063/1.373467
[20]
Chung B C, Gershenzon M. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy. J Appl Phys, 1992, 72(2): 651 doi: 10.1063/1.351848
[21]
Pristovsek M, Furuhashi I, Pampili P. Growth of N-polar (0001) GaN in metal–organic vapour phase epitaxy on sapphire. Crystals, 2023, 13(7): 1072 doi: 10.3390/cryst13071072
[22]
Reddy P, Bryan I, Bryan Z, et al. The effect of polarity and surface states on the Fermi level at III-nitride surfaces. J Appl Phys, 2014, 116(12): 123701 doi: 10.1063/1.4896377
[23]
Bartoš I, Romanyuk O, Houdkova J, et al. Electron band bending of polar, semipolar and non-polar GaN surfaces. J Appl Phys, 2016, 119(10): 105303 doi: 10.1063/1.4943592
[24]
Jana R K, Jena D. Stark-effect scattering in rough quantum wells. Appl Phys Lett, 2011, 99: 012104 doi: 10.1063/1.3607485
[25]
Singisetti U, Hoi Wong M, Mishra U K. Interface roughness scattering in ultra-thin N-polar GaN quantum well channels. Appl Phys Lett, 2012, 101: 012101 doi: 10.1063/1.4732795
[26]
Chen Y H, Encomendero J, Savant C, et al. Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates. Appl Phys Lett, 2024, 124(15): 152111 doi: 10.1063/5.0190822
[27]
Zhang Z X, Encomendero J, Kim E, et al. High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates. Appl Phys Lett, 2022, 121(8): 082107 doi: 10.1063/5.0107159
[28]
Vurgaftman I, Meyer J R. Band parameters for nitrogen-containing semiconductors. J Appl Phys, 2003, 94(6): 3675 doi: 10.1063/1.1600519
[29]
Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III–V compound semiconductors and their alloys. J Appl Phys, 2001, 89(11): 5815 doi: 10.1063/1.1368156
[30]
Gaska R, Shur M S, Bykhovski A D. Pyroelectric and piezoelectric properties of GaN-based materials. MRS Internet J Nitride Semicond Res, 1999, 4(1): 57 doi: 10.1557/S1092578300002246
[31]
Feneberg M, Thonke K. Polarization fields of III-nitrides grown in different crystal orientations. J Phys Condens Matter, 2007, 19(40): 403201 doi: 10.1088/0953-8984/19/40/403201
[32]
Nakamura N, Ogi H, Hirao M. Elastic, anelastic, and piezoelectric coefficients of GaN. J Appl Phys, 2012, 111: 013509 doi: 10.1063/1.3674271
[33]
Sedhain A, Li J, Lin J Y, et al. Probing exciton-phonon interaction in AlN epilayers by photoluminescence. Appl Phys Lett, 2009, 95(6): 061106 doi: 10.1063/1.3206672
[34]
Ilegems M, Dingle R, Logan R A. Luminescence of Zn- and Cd-doped GaN. J Appl Phys, 1972, 43(9): 3797 doi: 10.1063/1.1661813
[35]
Goldhahn R. Dielectric function of nitride semiconductors: Recent experimental results. Acta Phys Pol A, 2003, 104(2): 123 doi: 10.12693/aphyspola.104.123
[36]
Shokhovets S, Goldhahn R, Gobsch G, et al. Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry. J Appl Phys, 2003, 94(1): 307 doi: 10.1063/1.1582369
[37]
Akasaki I, Hashimoto M. Infrared lattice vibration of vapour-grown AlN. Solid State Commun, 1967, 5(11): 851 doi: 10.1016/0038-1098(67)90313-4
[38]
Barker A S, Ilegems M. Infrared lattice vibrations and free-electron dispersion in GaN. Phys Rev B, 1973, 7(2): 743 doi: 10.1103/PhysRevB.7.743
[39]
Yan Q M, Rinke P, Scheffler M, et al. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl Phys Lett, 2009, 95(12): 121111 doi: 10.1063/1.3236533
[40]
Shur M, Gelmont B, Asif Khan M. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN. J Electron Mater, 1996, 25(5): 777 doi: 10.1007/BF02666636
[41]
Zanato D, Gokden S, Balkan N, et al. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond Sci Technol, 2004, 19(3): 427 doi: 10.1088/0268-1242/19/3/024
[42]
Gurusinghe M N, Davidsson S K, Andersson T G. Two-dimensional electron mobility limitation mechanisms in AlxGa1–xN/GaN heterostructures. Phys Rev B, 2005, 72(4): 045316 doi: 10.1103/physrevb.72.045316
[43]
Alause H, Knap W, Azema S C, et al. Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures. Mater Sci Eng B, 1997, 46(1/2/3): 79 doi: 10.1016/s0921-5107(96)01936-8
[44]
Knap W, Contreras S, Alause H, et al. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface. Appl Phys Lett, 1997, 70(16): 2123 doi: 10.1063/1.118967
[45]
Pristovsek M., Robin Y, Effective mass is limiting the sheet resistance of 2-dimensional electron gases in the III-nitride system. Nature Electronics, submitted

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    Received: Revised: Online: Accepted Manuscript: 26 April 2026

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      Yoann Robin, Itsuki Furuhashi, Markus Pristovsek. The limits of electrical transport in thin GaN channels on N-polar AlN[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26010034 ****Y A N R O bin, I Furuhashi, and M Pristovsek, The limits of electrical transport in thin GaN channels on N-polar AlN[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26010034
      Citation:
      Yoann Robin, Itsuki Furuhashi, Markus Pristovsek. The limits of electrical transport in thin GaN channels on N-polar AlN[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26010034 ****
      Y A N R O bin, I Furuhashi, and M Pristovsek, The limits of electrical transport in thin GaN channels on N-polar AlN[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26010034
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      The limits of electrical transport in thin GaN channels on N-polar AlN

      DOI: 10.1088/1674-4926/26010034
      CSTR: 32376.14.1674-4926.26010034
      • 1.

        Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa-Ku, Nagoya, 464-8601 Japan

      • 2.

        Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa-Ku, Nagoya, 464-8601 Japan

      More Information
      • Yoann Robin received his PhD degree in 2014 from the Université de Montpellier. He is a Research Engineer at CNRS (France) and is currently working at IMaSS, Nagoya University, Japan. His research focuses on the growth and characterization of nitride-based compound materials and devices
      • Itsuki Furuhashi is a second year PhD student of electrical engineering at Nagoya University
      • Markus Pristovsek had obtained his PhD in 2000, and during his career stayed at the National Institute of Material Science, Japan, as Assistant Prof. at the Technical University of Berlin, Germany and as Senior Researcher at the University of Cambridge, UK before being appointed in 2017 as Designated Professor in 2017 in the Center for Integrated Research of Future Electronics at the Institute for Materials and Systems for Sustainability of Nagoya University. His interests are the growth of unusual III-V semiconductors and their thorough understanding of the basic physics of such devices
      • Corresponding author: yoann.robin2019@gmail.com; markus.pristovsek@nagoya-u.jp
      • Available Online: 2026-04-26

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